We are Apogeeweb Semiconductor Electronic

WELCOME TO OUR BLOG

Home  QRD1114  QRD1114 VS QRD1114

QRD1114 vs QRD1114 vs QRD1114 Comparison

  • Hide Shared Attributes
    QRD1114
    QRD1114
  • Part No.
    QRD1114
    QRD1114
    QRD1114
  • Description
    Reflective Photo Interrupter, Phototransistor, Through Hole, 1.27mm, 50mA, 5 Vr, 1.7 Vf
    Reflective Photo Interrupter, Phototransistor, Through Hole, 1.27mm, 50mA, 5 Vr, 1.7 Vf
    Reflective Photo Interrupter, Phototransistor, Through Hole, 1.27mm, 50mA, 5 Vr, 1.7 Vf
  • Manufacturer
    ON Semiconductor
    ON Semiconductor
    ON Semiconductor
  • Classification
    -
    -
    -
  • Reference Price(USD)
    $0.454
    $0.454
    $0.454
  • Inventory(pcs)
    13.6k
    13.6k
    13.6k
  • Case/Package
    MFP-4
    MFP-4
    MFP-4
  • Number of Pins
    4
    4
    4
  • Number of Channels
    -
    -
    -
  • Power Dissipation
    100 mW
    100 mW
    100 mW
  • Operating Voltage
    -
    -
    -
  • Rise Time
    -
    -
    -
  • Output Voltage
    -
    -
    -
  • Peak Wavelength
    940 nm
    940 nm
    940 nm
  • Wavelength
    940 nm
    940 nm
    940 nm
  • Forward Voltage
    1.7 V
    1.7 V
    1.7 V
  • Breakdown Voltage (Collector to Emitter)
    30 V
    30 V
    30 V
  • Forward Current
    50 mA
    50 mA
    50 mA
  • ECCN Code
    EAR99
    EAR99
    EAR99
  • Supply Voltage (DC)
    -
    -
    -
  • Input Current
    -
    -
    -
  • Operating Temperature
    -
    -
    -
  • Size-Width
    -
    -
    -
  • Size-Height
    -
    -
    -
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Bag
    Bag
    Bag
  • REACH SVHC Compliance
    -
    -
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Forward Current (Max)
    50 mA
    50 mA
    50 mA
  • Supply Voltage
    -
    -
    -
  • Fall Time
    -
    -
    -
  • Fall Time (Max)
    50000 ns
    50000 ns
    50000 ns
  • Operating Temperature (Max)
    85 ℃
    85 ℃
    85 ℃
  • Operating Temperature (Min)
    -40 ℃
    -40 ℃
    -40 ℃
  • Power Dissipation (Max)
    100 mW
    100 mW
    100 mW
  • Medical-Spec
    Yes
    Yes
    Yes
  • Reverse Breakdown Voltage
    -
    -
    -
  • REACH SVHC Compliance Edition
    -
    -
    -
  • Overview
    QRD1114 Product overview

    The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. Features ---  

    .
    Phototransistor output
    .
    No contact surface sensing
    .
    Unfocused for sensing diffused surfaces
    .
    Compact package
    .
    Daylight filter on sensor
    View all
    QRD1114 Product overview

    The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. Features ---  

    .
    Phototransistor output
    .
    No contact surface sensing
    .
    Unfocused for sensing diffused surfaces
    .
    Compact package
    .
    Daylight filter on sensor
    View all
    QRD1114 Product overview

    The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photodarlington mounted side by side in a black plastic housing. The on-axis radiation of the emitter and the on-axis response of the detector are both perpendicular to the face of the QRD1113/14. The photodarlington responds to radiation emitted from the diode only when a reflective object or surface is in the field of view of the detector. Features ---  

    .
    Phototransistor output
    .
    No contact surface sensing
    .
    Unfocused for sensing diffused surfaces
    .
    Compact package
    .
    Daylight filter on sensor
    View all

QRD1114 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:QRD1114 Mfr.Part#:QRD1114 Compare: Current Part Manufacturers:ON Semiconductor Category: Description:Reflective Photo Interrupter, Phototransistor, Through Hole, 1.27mm, 50mA, 5 Vr, 1.7 Vf
Image:QRD1114 Mfr.Part#:QRD1114 Compare: QRD1114 VS QRD1114 Manufacturers:QT Optoelectronics Category: Description:REFLECTIVE OBJECT SENSOR