OPA602BP vs LF356N/NOPB vs LF356N Comparison

The OPA602BP is a precision wide bandwidth FET Operational Amplifier for data conversion. Monolithic Difet (dielectrically isolated FET) construction provides an unusual combination of high-speed and accuracy. Its wide-bandwidth design minimizes dynamic errors. High slew rate and fast settling time allow accurate signal processing in pulse and data conversion applications. Wide band-width and low distortion minimize AC errors. All specifications are rated with a 1kR resistor in parallel with 500pF load. The OPA602 is unity-gain stable and easily drives capacitive loads up to 1500pF. Laser-trimmed input circuitry provides offset voltage and drift performance normally associated with precision bipolar op amps. Difet construction achieves extremely low input bias currents (1pA maximum) without compromising input voltage noise. The OPA602"s unique input cascade circuitry maintains low input bias current and precise input characteristics over its full input common-mode voltage range.

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Unity-gain stable

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Continuous output short-circuit to ground (+25°C)

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±250µV Maximum low offset

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±1pA Maximum low bias current

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1µs to 0.01% Fast settling time

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1000mW Internal power dissipation (TJ

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Green product and no Sb/Br

The LF356N/NOPB is a monolithic JFET input precision Operational Amplifier to incorporate well-matched, high-voltage JFETs on the same chip with standard bipolar transistors (BI-FET™ Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust, which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

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Fast slew rate

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Wide gain bandwidth

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Low input noise voltage

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Extremely fast settling time to 0.01%

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Replace expensive hybrid and module FET op amps

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Rugged JFETs allow blow-out free handling compared with MOSFET input devices

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Excellent for low noise applications using either high or low source impedance

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New output stage allows use of large capacitive loads (5,000pF) without stability problems

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Internal compensation and large differential input voltage capability

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Green product and no Sb/Br

These are the first monolithic JFET input operational amplifiers to incorporate well matched, high voltage JFETs on the same chip with standard bipolar transistors (BI-FET Technology). These amplifiers feature low input bias and offset currents/low offset voltage and offset voltage drift, coupled with offset adjust which does not degrade drift or common-mode rejection. The devices are also designed for high slew rate, wide bandwidth, extremely fast settling time, low voltage and current noise and a low 1/f noise corner.

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Replace expensive hybrid and module FET op amps

.

Rugged JFETs allow blow-out free handling compared with MOSFET input devices

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Excellent for low noise applications using either high or low source impedance

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Offset adjust does not degrade drift or common-mode rejection as in most monolithic amplifiers

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New output stage allows use of large capacitive loads without stability problems

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Internal compensation and large differential input voltage capability