NX3DV221GM,132 vs NX3DV221GM,115 vs TS3USB221RSER Comparison

USB Switch IC 1 Channel 10-XQFN (1.55x2)

The NX3DV221GM is a high-speed USB 2.0 Switch with an enable. It is designed for the switching of high-speed USB 2.0 signals in handset and consumer applications. The wide bandwidth (1GHz) of this switch allows signal to pass with minimum edge and phase distortion. The device multiplexes differential outputs from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. It is designed for low bit-to-bit skew and high channel-to-channel noise isolation and is compatible with various standards, such as high-speed USB 2.0 (480Mbps).

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2mA Maximum low-power mode when OE\ is high

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6W Maximum ON resistance

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0.1W Typical on-resistance mismatch between channels

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6pF Typical ON-state capacitance

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1GHz Typical high bandwidth

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Latch-up performance exceeds 100mA per JESD 78B class II level A

The TS3USB221RSER is a high-bandwidth Switch specially designed for the switching of high-speed USB 2.0 signals with limited USB I/Os. The wide bandwidth (1.1GHz) of this switch allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs from an USB host device to one of two corresponding outputs. The switch is bidirectional and offers little or no attenuation of the high-speed signals at the outputs. The TS3USB221 is designed for low bit-to-bit skew and high channel to channel noise isolation and is compatible with various standards, such as high-speed USB 2.0 (480Mbps).

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1µA Low-power mode when OE is disabled

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30µA Maximum low power consumption

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1.1GHz Typical high bandwidth

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0.2R Ron Maximum channel match

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1.1GHz Typical high bandwidth

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ESD >2000V human-body model (HBM)

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Green product and no Sb/Br