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FDG6301N vs NTJD5121NT1G vs NTJD4001NT1G Comparison

  • Hide Shared Attributes
    FDG6301N
    FDG6301N
    NTJD5121NT1G
    NTJD5121NT1G
    NTJD4001NT1G
    NTJD4001NT1G
  • Part No.
    FDG6301N
    NTJD5121NT1G
    NTJD4001NT1G
  • Description
    Trans MOSFET N-CH 25V 0.22A 6Pin SC-70 T/R
    SC-88 N-CH 60V 0.295A
    MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 1Ω; ID 250mA; SOT-363; PD 272mW; VGS +/-20V; -55d
  • Manufacturer
    Fairchild
    ON Semiconductor
    ON Semiconductor
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.185
    $0.019
    $0.035
  • Inventory(pcs)
    1.8k
    14.5k
    211.6k
  • Case/Package
    SC-70-6
    SOT-363
    SC-70-6
  • Number of Pins
    6
    6
    6
  • Power Dissipation
    300 mW
    266 mW
    272 mW
  • Number of Positions
    6
    6
    6
  • Input Capacitance
    9.50 pF
    -
    20pF @5V
  • Rise Time
    4.5 ns
    34 ns
    23 ns
  • Voltage Rating (DC)
    25.0 V
    -
    30.0 V
  • Drain to Source Resistance (on) (Rds)
    4 Ω
    1 Ω
    1 Ω
  • Polarity
    N-Channel, Dual N-Channel
    Dual N-Channel
    Dual N-Channel
  • Drain to Source Voltage (Vds)
    25 V
    60 V
    30 V
  • Threshold Voltage
    850 mV
    1.7 V
    1.2 V
  • ECCN Code
    EAR99
    EAR99
    EAR99
  • Current Rating
    220 mA
    -
    250 mA
  • Breakdown Voltage (Drain to Source)
    25.0 V
    -
    30 V
  • Breakdown Voltage (Gate to Source)
    8.00 V
    -
    ±20.0 V
  • Continuous Drain Current (Ids)
    220 mA
    330 mA, 295 mA
    250 mA
  • Operating Temperature
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
  • Gate Charge
    290 pC
    -
    -
  • Size-Length
    2 mm
    2.2 mm
    2.2 mm
  • Size-Width
    1.25 mm
    1.35 mm
    1.35 mm
  • Size-Height
    1 mm
    1 mm
    1 mm
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Tape & Reel (TR)
    Tape & Reel (TR)
    Tape & Reel (TR)
  • REACH SVHC Compliance
    No SVHC
    No SVHC
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    150 ℃
  • Input Capacitance (Ciss)
    9.5pF @10V(Vds)
    26pF @20V(Vds)
    33pF @5V(Vds)
  • Automative-Spec
    -
    -
    Yes
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Input Power (Max)
    300 mW
    250 mW
    272 mW
  • Industrial-Spec
    -
    Yes
    Yes
  • Power Dissipation (Max)
    0.3 W
    266 mW
    2.72 W
  • Fall Time
    3.2 ns
    32 ns
    82 ns
  • REACH SVHC Compliance Edition
    2015/06/15
    2015/12/17
    2015/12/17
  • Maximum Forward Voltage (Max)
    -
    1.2 V
    -
  • Transistor Gender
    Dual N Channel
    N Channel
    N Channel
  • Overview
    FDG6301N Product overview

    The FDG6301N is a dual N-channel logic level enhancement-mode Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signals MOSFETs.

    .
    Very low level gate drive requirements allowing direct operation in 3V circuits (VGS (th) <1.5V)
    .
    Gate-source Zener for ESD ruggedness (>6kV human body model)
    .
    Compact industry standard surface-mount-package
    View all
    NTJD5121NT1G Product overview

    The NTJD5121NT1G is a dual N-channel Power MOSFET with ESD protection, low gate threshold and low input capacitance.

    .
    ±20V Gate-source voltage
    .
    900mA Pulsed drain current
    .
    1400V Gate-source ESD rating
    View all
    NTJD4001NT1G Product overview

    The NTJD4001NT1G is a dual N-channel small signal MOSFET designed for Li-Ion battery supplied devices like cell phones, PDAs and DSC. It is suitable for low side load switch, buck converters and level shift applications.

    .
    Low gate charge for fast switching
    .
    ESD protected gate
    View all

NTJD5121NT1G Alternative Parts

Image Part Compare Manufacturer Category Description
Image:NTJD5121NT1G Mfr.Part#:NTJD5121NT1G Compare: Current Part Manufacturers:ON Semiconductor Category:MOSFETs Description:SC-88 N-CH 60V 0.295A
Image:NTJD4001NT1G Mfr.Part#:NTJD4001NT1G Compare: NTJD5121NT1G VS NTJD4001NT1G Manufacturers:ON Semiconductor Category:MOSFETs Description:MOSFET; Dual N-Ch; VDSS 30V; RDS(ON) 1Ω; ID 250mA; SOT-363; PD 272mW; VGS +/-20V; -55d
Image:FDG6301N Mfr.Part#:FDG6301N Compare: NTJD5121NT1G VS FDG6301N Manufacturers:Fairchild Category:MOSFETs Description:Trans MOSFET N-CH 25V 0.22A 6Pin SC-70 T/R
Image:NTJD5121NT2G Mfr.Part#:NTJD5121NT2G Compare: NTJD5121NT1G VS NTJD5121NT2G Manufacturers:ON Semiconductor Category:MOSFETs Description:Trans MOSFET N-CH 60V 0.295A 6Pin SC-88 T/R