The FDG6301N is a dual N-channel logic level enhancement-mode Digital FET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance. It has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signals MOSFETs.
The NTJD5121NT1G is a dual N-channel Power MOSFET with ESD protection, low gate threshold and low input capacitance.
The NTJD4001NT1G is a dual N-channel small signal MOSFET designed for Li-Ion battery supplied devices like cell phones, PDAs and DSC. It is suitable for low side load switch, buck converters and level shift applications.