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NTHS4101PT1 vs NTHS4101PT1G Comparison

  • Hide Shared Attributes
    NTHS4101PT1
    NTHS4101PT1
    NTHS4101PT1G
    NTHS4101PT1G
  • Part No.
    NTHS4101PT1
    NTHS4101PT1G
  • Description
    Chip P-CH 20V 4.8A
    Chip P-CH 20V 4.8A
  • Manufacturer
    ON Semiconductor
    ON Semiconductor
  • Classification
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.212
    $0.161
  • Inventory(pcs)
    0
    10.7k
  • Case/Package
    ChipFET-8
    SMD-8
  • Number of Pins
    -
    8
  • Number of Channels
    1
    -
  • Power Dissipation
    1.3 W
    1.3 W
  • Number of Positions
    -
    8
  • Rise Time
    28 ns
    28 ns
  • Voltage Rating (DC)
    -20.0 V
    -20.0 V
  • Drain to Source Resistance (on) (Rds)
    42 mΩ
    0.021 Ω
  • Polarity
    P-Channel
    P-Channel
  • Drain to Source Voltage (Vds)
    20.0 V
    20 V
  • ECCN Code
    -
    EAR99
  • Current Rating
    -4.80 A
    -4.80 A
  • Breakdown Voltage (Gate to Source)
    ±8.00 V
    ±8.00 V
  • Breakdown Voltage (Drain to Source)
    20 V
    -
  • Continuous Drain Current (Ids)
    4.80 A
    6.70 A, -4.80 A
  • Operating Temperature
    -
    -55℃ ~ 150℃ (TJ)
  • Size-Length
    3.05 mm
    3.1 mm
  • Size-Width
    1.65 mm
    1.7 mm
  • Size-Height
    1.05 mm
    1.1 mm
  • Mounting Style
    Surface Mount
    Surface Mount
  • Packaging
    Tape & Reel (TR)
    Tape & Reel (TR)
  • Lead-Free Status
    Contains Lead
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Active
  • Operating Temperature (Max)
    -
    150 ℃
  • Operating Temperature (Min)
    -
    -55 ℃
  • Fall Time
    28 ns
    60 ns
  • Power Dissipation (Max)
    -
    1.3W (Ta)
  • REACH SVHC Compliance Edition
    -
    2015/12/17
  • Transistor Gender
    -
    P Channel
  • Input Capacitance (Ciss)
    -
    2100pF @16V(Vds)
  • Input Power (Max)
    -
    1.3 W
  • Overview
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    NTHS4101PT1G Product overview

    Compared to traditional transistors, NTHS4101PT1G power MOSFETs, developed by ON Semiconductor, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 2500 mW. This product will be shipped in tape and reel packaging so that components can be mounted effectively. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C. This P channel MOSFET transistor operates in enhancement mode.

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NTHS4101PT1G Alternative Parts

Image Part Compare Manufacturer Category Description
Image:NTHS4101PT1G Mfr.Part#:NTHS4101PT1G Compare: Current Part Manufacturers:ON Semiconductor Category:MOSFETs Description:Chip P-CH 20V 4.8A
Image:NTHS4101PT1 Mfr.Part#:NTHS4101PT1 Compare: NTHS4101PT1G VS NTHS4101PT1 Manufacturers:ON Semiconductor Category:MOSFETs Description:Chip P-CH 20V 4.8A