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NT5TU64M16DG-AC vs NT5TU64M16HG-AC vs W971GG6JB-3 Comparison

  • Hide Shared Attributes
    NT5TU64M16DG-AC
    NT5TU64M16DG-AC
    NT5TU64M16HG-AC
    NT5TU64M16HG-AC
    W971GG6JB-3
    W971GG6JB-3
  • Part No.
    NT5TU64M16DG-AC
    NT5TU64M16HG-AC
    W971GG6JB-3
  • Description
    DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84Pin BGA
    DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84Pin BGA
    8M X 8 BANKS X 16Bit DDR2 SDRAM
  • Manufacturer
    Nanya
    Nanya
    Winbond Electronics
  • Classification
    -
    -
    RAM Memory
  • Reference Price(USD)
    $0.837
    $1.616
    $1.046
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    BGA
    BGA
    BGA
  • Number of Pins
    -
    84
    -
  • Number of Bits
    -
    16
    -
  • ECCN Code
    -
    EAR99
    -
  • HK STC License
    -
    NLR
    -
  • Mounting Style
    Surface Mount
    -
    Surface Mount
  • Packaging
    -
    Tape & Reel (TR)
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Obsolete
    Active
    Obsolete
  • Access Time(Max)
    -
    0.4 ns
    -
  • Operating Temperature (Max)
    -
    95 ℃
    -
  • Operating Temperature (Min)
    -
    0 ℃
    -
  • Overview
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    W971GG6JB-3 Product overview

    GENERAL DESCRIPTION The W971GG6JB is a 1G bits DDR2 SDRAM, organized as 8,388,608 words 8 banks 16 bits. This device achieves high speed transfer rates up to 1066Mb/sec/pin (DDR2-1066) for various applications. W971GG6JB is sorted into the following grade parts: -18, -25, 25L, 25I, 25A, 25K, -3 and -3A. The -18 grade parts is compliant to the DDR2-1066 (6-6-6) specification. The -25/25L/25I/25A/25K grade parts are  compliant  to  the  DDR2-800  (5-5-5)  specification  (the  25L  grade  parts  is  guaranteed  to  support IDD2P = 7 mA and IDD6 = 4 mA at commercial temperature, the 25I industrial grade parts is guaranteed to  support  -40°C  ≤  TCASE  ≤  95°C).  The  -3/-3A  grade  parts  is  compliant  to  the  DDR2-667  (5-5-5) specification. FEATURES Power Supply: VDD, VDDQ = 1.8 V ± 0.1 V Double Data Rate architecture: two data transfers per clock cycle CAS Latency: 3, 4, 5, 6 and 7 Burst Length: 4 and 8 Bi-directional, differential data strobes (DQS and DQS) are transmitted / received with data Edge-aligned with Read data and center-aligned with Write data DLL aligns DQ and DQS transitions with clock Differential clock inputs (CLK and CLK) Data masks (DM) for write data Commands entered on each positive CLK edge, data and data mask are referenced to both edges of DQS Posted CAS programmable additive latency supported to make command and data bus efficiency Read Latency = Additive Latency plus CAS Latency (RL = AL + CL) Off-Chip-Driver  impedance  adjustment  (OCD)  and  On-Die-Termination  (ODT)  for  better  signal quality Auto-precharge operation for read and write bursts Auto Refresh and Self Refresh modes Precharged Power Down and Active Power Down Write Data Mask Write Latency = Read Latency - 1 (WL = RL - 1) Interface: SSTL_18 Packaged in WBGA 84 Ball (8X12.5 mm2), using Lead free materials with RoHS compliant

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NT5TU64M16HG-AC Alternative Parts

Image Part Compare Manufacturer Category Description
Image:NT5TU64M16HG-AC Mfr.Part#:NT5TU64M16HG-AC Compare: Current Part Manufacturers:Nanya Category: Description:DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84Pin BGA
Image:NT5TU64M16HG-BE Mfr.Part#:NT5TU64M16HG-BE Compare: NT5TU64M16HG-AC VS NT5TU64M16HG-BE Manufacturers:Nanya Category: Description:DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V
Image:H5PS1G63JFR-G7C Mfr.Part#:H5PS1G63JFR-G7C Compare: NT5TU64M16HG-AC VS H5PS1G63JFR-G7C Manufacturers:SK Hynix Category: Description:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84Pin FBGA
Image:NT5TU64M16DG-AC Mfr.Part#:NT5TU64M16DG-AC Compare: NT5TU64M16HG-AC VS NT5TU64M16DG-AC Manufacturers:Nanya Category: Description:DRAM Chip DDR2 SDRAM 1Gbit 64Mx16 1.8V 84Pin BGA