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NT5CB64M16DP-CF vs NT5CB64M16DP-DH vs K4B1G1646G-BCH9 Comparison

  • Hide Shared Attributes
    NT5CB64M16DP-CF
    NT5CB64M16DP-CF
    NT5CB64M16DP-DH
    NT5CB64M16DP-DH
    K4B1G1646G-BCH9
    K4B1G1646G-BCH9
  • Part No.
    NT5CB64M16DP-CF
    NT5CB64M16DP-DH
    K4B1G1646G-BCH9
  • Description
    DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96Pin WBGA
    DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96Pin WBGA
    DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96Pin FBGA
  • Manufacturer
    Nanya
    Nanya
    Samsung
  • Classification
    -
    -
    RAM Memory
  • Reference Price(USD)
    $0.889
    -
    $1.240
  • Inventory(pcs)
    0
    2.2k
    222
  • Case/Package
    BGA
    TFBGA
    FBGA
  • Number of Pins
    96
    96
    96
  • Number of Bits
    16
    16
    16
  • HK STC License
    -
    -
    NLR
  • ECCN Code
    EAR99
    -
    -
  • Size-Height
    -
    0.8 mm
    -
  • Mounting Style
    -
    -
    Surface Mount
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Obsolete
    Obsolete
    Obsolete
  • Operating Temperature (Min)
    0 ℃
    0 ℃
    0 ℃
  • Access Time(Max)
    0.255 ns
    0.225 ns
    0.255 ns
  • Operating Temperature (Max)
    85 ℃
    85 ℃
    95 ℃
  • Supply Voltage
    -
    -
    1.425V ~ 1.575V
  • Overview
    NT5CB64M16DP-CF Product overview

    Description The 1Gb Double-Data-Rate-3 (DDR3/L) B-die DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 banks or 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.

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    NT5CB64M16DP-DH Product overview

    Description The 1Gb Double-Data-Rate-3 (DDR3/L) B-die DRAMs is double data rate architecture to achieve high-speed operation. It is internally configured as an eight bank DRAM. The 1Gb chip is organized as 16Mbit x 8 I/Os x 8 banks or 8Mbit x 16 I/Os x 8 bank devices. These synchronous devices achieve high speed double-data-rate transfer rates of up to 2133 Mb/sec/pin for general applications.

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NT5CB64M16DP-CF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:NT5CB64M16DP-CF Mfr.Part#:NT5CB64M16DP-CF Compare: Current Part Manufacturers:Nanya Category: Description:DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96Pin WBGA
Image:NT5CB64M16DP-DH Mfr.Part#:NT5CB64M16DP-DH Compare: NT5CB64M16DP-CF VS NT5CB64M16DP-DH Manufacturers:Nanya Category: Description:DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96Pin WBGA
Image:H5TQ1G63BFR-H9C Mfr.Part#:H5TQ1G63BFR-H9C Compare: NT5CB64M16DP-CF VS H5TQ1G63BFR-H9C Manufacturers:SK Hynix Category: Description:DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96Pin FBGA
Image:H5TQ1G63DFR-H9C Mfr.Part#:H5TQ1G63DFR-H9C Compare: NT5CB64M16DP-CF VS H5TQ1G63DFR-H9C Manufacturers:SK Hynix Category:RAM Memory Description:DRAM Chip DDR3 SDRAM 1Gbit 64Mx16 1.5V 96Pin FBGA