

NSS60601MZ4T1G vs ZXTN2010GTA vs DSS60601MZ4-13 Comparison
- Hide Shared Attributes
- Part No.
- NSS60601MZ4T1G
- ZXTN2010GTA
- DSS60601MZ4-13
- Description
- SOT-223 NPN 60V 6A
- Trans GP BJT NPN 60V 6A 3000mW Automotive 4Pin(3+Tab) SOT-223 T/R
- Trans GP BJT NPN 60V 6A 1200mW Automotive 4Pin(3+Tab) SOT-223 T/R
- Manufacturer
- On semiconductor
- Diodes
- Diodes
- Classification
- BJTs
- BJTs
- BJTs
- Reference Price(USD)
- $0.143
- $0.293
- $0.104
- Inventory(pcs)
- 7.4k
- 138k
- 132.3k
- Case/Package
- TO-261-4
- TO-261-4
- TO-261-4
- Number of Pins
- 4
- 4
- 4
- Frequency
- 100 MHz
- 130 MHz
- 100 MHz
- Power Dissipation
- 710 mW
- 1.6 W
- 1.2 W
- Number of Positions
- 4
- 4
- -
- Voltage Rating (DC)
- -
- 60.0 V
- -
- Polarity
- NPN
- NPN
- NPN
- ECCN Code
- EAR99
- EAR99
- EAR99
- Continuous Collector Current
- 6A
- 6A
- 6A
- hFE Min
- 120 @1A, 2V
- 100 @2A, 1V
- 120 @1A, 2V
- Breakdown Voltage (Collector to Emitter)
- 60 V
- 60 V
- 60 V
- Current Rating
- -
- 6.00 A
- -
- Operating Temperature
- -55℃ ~ 150℃ (TJ)
- -55℃ ~ 150℃ (TJ)
- -55℃ ~ 150℃ (TJ)
- Mil-Spec
- -
- Yes
- -
- Halogen Free Status
- Halogen Free
- -
- -
- Mounting Style
- Surface Mount
- Surface Mount
- Surface Mount
- Packaging
- Tape & Reel (TR)
- Tape & Reel (TR)
- Tape & Reel (TR)
- REACH SVHC Compliance
- No SVHC
- No SVHC
- No SVHC
- Lead-Free Status
- Lead Free
- Lead Free
- Lead Free
- RoHS
- RoHS Compliant
- RoHS Compliant
- Product Lifecycle Status
- Active
- Active
- Active
- Automative-Spec
- Yes
- Yes
- -
- REACH SVHC Compliance Edition
- 2015/12/17
- 2015/12/17
- 2015/12/17
- Input Power (Max)
- 800 mW
- 3 W
- 1.2 W
- Transistor Gender
- NPN
- NPN
- -
- DC Current Gain (hFE)
- 50
- 200
- 150
- Operating Temperature (Max)
- 150 ℃
- 150 ℃
- 150 ℃
- Industrial-Spec
- -
- Yes
- -
- Operating Temperature (Min)
- -55 ℃
- -55 ℃
- -55 ℃
- Aerospace-Spec
- -
- Yes
- -
- Power Dissipation (Max)
- 2000 mW
- 3000 mW
- 1200 mW
- Overview
-
NSS60601MZ4T1G Product overview
Bipolar (BJT) Transistor NPN 60V 6A 100MHz 800mW Surface Mount SOT-223
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ZXTN2010GTA Product overview
Jump-start your electronic circuit design with this versatile NPN ZXTN2010GTA GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 7 V. Its maximum power dissipation is 3000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 7 V. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
View all -
DSS60601MZ4-13 Product overview
Design filters, receivers, transmitters, op-amps, power supplies, and control circuits with this versatile NPN DSS60601MZ4-13 GP BJT from Diodes Zetex. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1200 mW. This product will be shipped in tape and reel packaging for quick mounting and safe delivery. This bipolar junction transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 6 V.
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NSS60601MZ4T1G Alternative Parts
Image | Part | Compare | Manufacturer | Category | Description | |
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Mfr.Part#:NSS60601MZ4T1G | Compare: Current Part | Manufacturers:On semiconductor | Category:BJTs | Description:Sot-223 npn 60v 6a | |
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Mfr.Part#:NSS60601MZ4T3G | Compare: NSS60601MZ4T1G VS NSS60601MZ4T3G | Manufacturers:On semiconductor | Category:BJTs | Description:Sot-223 npn 60v 6a | |
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Mfr.Part#:NSV60601MZ4T3G | Compare: NSS60601MZ4T1G VS NSV60601MZ4T3G | Manufacturers:On semiconductor | Category:BJTs | Description:Sot-223 npn 60v 6a | |
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Mfr.Part#:ZXTN2010GTA | Compare: NSS60601MZ4T1G VS ZXTN2010GTA | Manufacturers:Diodes | Category:BJTs | Description:Trans gp bjt npn 60v 6a 3000mw automoN/Ave 4pin(3+tab) sot-223 t/r |