We are Apogeeweb Semiconductor Electronic

WELCOME TO OUR BLOG

Home  NAND512W3A2BN6  NAND512W3A2BN6 VS TC58NVM9S3ETA00

K9F1208U0C-PCB00 vs NAND512W3A2BN6 vs K9F1208U0C-PIB0 Comparison

  • Hide Shared Attributes
    K9F1208U0C-PCB00
    K9F1208U0C-PCB00
    NAND512W3A2BN6
    NAND512W3A2BN6
    K9F1208U0C-PIB0
    K9F1208U0C-PIB0
  • Part No.
    K9F1208U0C-PCB00
    NAND512W3A2BN6
    K9F1208U0C-PIB0
  • Description
    Flash, 64MX8, 30ns, PDSO48, 12 X 20 MM, 0.50 MM PITCH, ROHS COMPLIANT, PLASTIC, TSOP1-48
    128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    Flash, 64MX8, 30ns, PDSO48, TSOP1-48
  • Manufacturer
    Samsung
    ST Microelectronics
    Samsung
  • Classification
    -
    -
    -
  • Reference Price(USD)
    -
    -
    -
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    TSOP1
    TSOP1
    TSOP1
  • Size-Length
    -
    -
    18.4 mm
  • Size-Width
    -
    -
    12 mm
  • Mounting Style
    -
    -
    Surface Mount
  • Lead-Free Status
    -
    -
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Obsolete
    Unknown
    Obsolete
  • Overview
    View all
    NAND512W3A2BN6 Product overview

    SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The de vices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V ■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words ■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words ■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) ■ COPY BACK PROGRAM MODE – Fast page copy without external buffering ■ FAST BLOCK ERASE – Block erase time: 2ms (Typ) ■ STATUS REGISTER ■ ELECTRONIC SIGNATURE ■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller ■ SERIAL NUMBER OPTION ■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions ■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention ■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive ■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models

    View all
    View all

NAND512W3A2BN6 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:NAND512W3A2BN6 Mfr.Part#:NAND512W3A2BN6 Compare: Current Part Manufacturers:ST Microelectronics Category: Description:128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Image:TC58NVM9S3ETA00 Mfr.Part#:TC58NVM9S3ETA00 Compare: NAND512W3A2BN6 VS TC58NVM9S3ETA00 Manufacturers:Toshiba Category:Flash Memory Description:SLC NAND Flash Serial 3.3V 512M-bit 64M x 8 30us 48Pin TSOP-I
Image:K9F1208U0C-PIB0 Mfr.Part#:K9F1208U0C-PIB0 Compare: NAND512W3A2BN6 VS K9F1208U0C-PIB0 Manufacturers:Samsung Category: Description:Flash, 64MX8, 30ns, PDSO48, TSOP1-48