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NAND128W3A0BN6F vs NAND128W3A2BN6 vs NAND128W3A0AN6F Comparison

  • Hide Shared Attributes
    NAND128W3A0BN6F
    NAND128W3A0BN6F
    NAND128W3A2BN6
    NAND128W3A2BN6
    NAND128W3A0AN6F
    NAND128W3A0AN6F
  • Part No.
    NAND128W3A0BN6F
    NAND128W3A2BN6
    NAND128W3A0AN6F
  • Description
    128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
  • Manufacturer
    ST Microelectronics
    ST Microelectronics
    ST Microelectronics
  • Classification
    -
    -
    Memory Chip
  • Reference Price(USD)
    -
    -
    -
  • Inventory(pcs)
    0
    2.2k
    0
  • Case/Package
    TSOP-48
    TSOP1
    TSOP-48
  • Operating Temperature
    -
    -
    -40℃ ~ 85℃ (TA)
  • Mounting Style
    -
    -
    Surface Mount
  • Packaging
    -
    -
    Tape & Reel (TR)
  • Lead-Free Status
    -
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Unknown
    Unknown
  • Supply Voltage
    -
    -
    2.7V ~ 3.6V
  • Operating Temperature (Max)
    85 ℃
    -
    -
  • Operating Temperature (Min)
    -40 ℃
    -
    -
  • Overview
    NAND128W3A0BN6F Product overview

    SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The de vices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V ■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words ■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words ■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) ■ COPY BACK PROGRAM MODE – Fast page copy without external buffering ■ FAST BLOCK ERASE – Block erase time: 2ms (Typ) ■ STATUS REGISTER ■ ELECTRONIC SIGNATURE ■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller ■ SERIAL NUMBER OPTION ■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions ■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention ■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive ■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models

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    NAND128W3A2BN6 Product overview

    SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The de vices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V ■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words ■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words ■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) ■ COPY BACK PROGRAM MODE – Fast page copy without external buffering ■ FAST BLOCK ERASE – Block erase time: 2ms (Typ) ■ STATUS REGISTER ■ ELECTRONIC SIGNATURE ■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller ■ SERIAL NUMBER OPTION ■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions ■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention ■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive ■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models

    View all
    NAND128W3A0AN6F Product overview

    SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The de vices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V ■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words ■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words ■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) ■ COPY BACK PROGRAM MODE – Fast page copy without external buffering ■ FAST BLOCK ERASE – Block erase time: 2ms (Typ) ■ STATUS REGISTER ■ ELECTRONIC SIGNATURE ■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller ■ SERIAL NUMBER OPTION ■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions ■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention ■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive ■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models

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NAND128W3A0BN6F Alternative Parts

Image Part Compare Manufacturer Category Description
Image:NAND128W3A0BN6F Mfr.Part#:NAND128W3A0BN6F Compare: Current Part Manufacturers:ST Microelectronics Category: Description:128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Image:NAND128W3A0AN6F Mfr.Part#:NAND128W3A0AN6F Compare: NAND128W3A0BN6F VS NAND128W3A0AN6F Manufacturers:ST Microelectronics Category:Memory Chip Description:128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Image:NAND128W3A0BN6E Mfr.Part#:NAND128W3A0BN6E Compare: NAND128W3A0BN6F VS NAND128W3A0BN6E Manufacturers:ST Microelectronics Category: Description:128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Image:NAND128W3A2BN6 Mfr.Part#:NAND128W3A2BN6 Compare: NAND128W3A0BN6F VS NAND128W3A2BN6 Manufacturers:ST Microelectronics Category: Description:128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories