NAND128W3A0BN6F vs NAND128W3A2BN6 vs NAND128W3A0AN6F Comparison

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The de vices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V ■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words ■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words ■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) ■ COPY BACK PROGRAM MODE – Fast page copy without external buffering ■ FAST BLOCK ERASE – Block erase time: 2ms (Typ) ■ STATUS REGISTER ■ ELECTRONIC SIGNATURE ■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller ■ SERIAL NUMBER OPTION ■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions ■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention ■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive ■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The de vices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V ■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words ■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words ■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) ■ COPY BACK PROGRAM MODE – Fast page copy without external buffering ■ FAST BLOCK ERASE – Block erase time: 2ms (Typ) ■ STATUS REGISTER ■ ELECTRONIC SIGNATURE ■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller ■ SERIAL NUMBER OPTION ■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions ■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention ■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive ■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models

SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The de vices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V ■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words ■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words ■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) ■ COPY BACK PROGRAM MODE – Fast page copy without external buffering ■ FAST BLOCK ERASE – Block erase time: 2ms (Typ) ■ STATUS REGISTER ■ ELECTRONIC SIGNATURE ■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller ■ SERIAL NUMBER OPTION ■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions ■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention ■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive ■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models