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NAND01GW3A2AN6E vs NAND01GW3B2AN6E vs NAND01GW3B2AN6 Comparison

  • Hide Shared Attributes
    NAND01GW3A2AN6E
    NAND01GW3A2AN6E
    NAND01GW3B2AN6E
    NAND01GW3B2AN6E
    NAND01GW3B2AN6
    NAND01GW3B2AN6
  • Part No.
    NAND01GW3A2AN6E
    NAND01GW3B2AN6E
    NAND01GW3B2AN6
  • Description
    128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48Pin TSOP Tray
    NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48Pin TSOP Tray
  • Manufacturer
    ST Microelectronics
    ST Microelectronics
    ST Microelectronics
  • Classification
    Memory Chip
    Memory Chip
    -
  • Reference Price(USD)
    -
    -
    -
  • Inventory(pcs)
    0
    0
    1.1k
  • Case/Package
    TSOP-48
    TSOP-48
    TSOP-48
  • Number of Pins
    -
    -
    48
  • Number of Bits
    -
    -
    8
  • Memory Size
    1000000000 B
    1000000000 B
    -
  • Supply Voltage (DC)
    3.30 V, 3.60 V (max)
    3.30 V, 3.60 V (max)
    -
  • Operating Temperature
    -40℃ ~ 85℃ (TA)
    -40℃ ~ 85℃ (TA)
    40℃ ~ 85℃
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Tray
    Tray
    Tray
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Unknown
    Unknown
  • Operating Temperature (Max)
    -
    85 ℃
    85 ℃
  • Supply Voltage (Min)
    -
    -
    2.7 V
  • Operating Temperature (Min)
    -
    -40 ℃
    40 ℃
  • Supply Voltage
    2.7V ~ 3.6V
    2.7V ~ 3.6V
    -
  • Access Time(Max)
    -
    -
    25000 ns
  • Supply Voltage (Max)
    -
    -
    3.6 V
  • Overview
    NAND01GW3A2AN6E Product overview

    SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The de vices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V ■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words ■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words ■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) ■ COPY BACK PROGRAM MODE – Fast page copy without external buffering ■ FAST BLOCK ERASE – Block erase time: 2ms (Typ) ■ STATUS REGISTER ■ ELECTRONIC SIGNATURE ■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller ■ SERIAL NUMBER OPTION ■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions ■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention ■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive ■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models

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    NAND01GW3B2AN6E Product overview

    FLASH - NAND Memory IC 1Gb (128M x 8) Parallel 30ns 48-TSOP

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    View all

NAND01GW3B2AN6E Alternative Parts

Image Part Compare Manufacturer Category Description
Image:NAND01GW3B2AN6E Mfr.Part#:NAND01GW3B2AN6E Compare: Current Part Manufacturers:ST Microelectronics Category:Memory Chip Description:NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48Pin TSOP Tray
Image:NAND01GW3A2AN6E Mfr.Part#:NAND01GW3A2AN6E Compare: NAND01GW3B2AN6E VS NAND01GW3A2AN6E Manufacturers:ST Microelectronics Category:Memory Chip Description:128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Image:NAND01GW3B2AN6 Mfr.Part#:NAND01GW3B2AN6 Compare: NAND01GW3B2AN6E VS NAND01GW3B2AN6 Manufacturers:ST Microelectronics Category: Description:NAND Flash Parallel 3V/3.3V 1G-bit 128M x 8 25us 48Pin TSOP Tray
Image:NAND01GW3B2BN6E Mfr.Part#:NAND01GW3B2BN6E Compare: NAND01GW3B2AN6E VS NAND01GW3B2BN6E Manufacturers:ST Microelectronics Category:Flash Memory Description:128MX8 FLASH 3V PROM, 25000ns, PDSO48, 12 X 20MM, LEAD FREE, PLASTIC, TSOP-48