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NAND01GW3A0AN6 vs NAND01GW3B2CN6F vs TC58DVG02A1FT00 Comparison

  • Hide Shared Attributes
    NAND01GW3A0AN6
    NAND01GW3A0AN6
    NAND01GW3B2CN6F
    NAND01GW3B2CN6F
    TC58DVG02A1FT00
    TC58DVG02A1FT00
  • Part No.
    NAND01GW3A0AN6
    NAND01GW3B2CN6F
    TC58DVG02A1FT00
  • Description
    128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
    1 Gbit, 2 Gbit, 2112Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
    SLC NAND Flash Serial 3.3V 1G-bit 128M x 8 48Pin TSOP
  • Manufacturer
    ST Microelectronics
    ST Microelectronics
    Toshiba
  • Classification
    -
    -
    -
  • Reference Price(USD)
    -
    -
    $0.719
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    TSOP1
    TSOP1
    TSOP1
  • Mounting Style
    Surface Mount
    -
    -
  • Packaging
    Tray
    -
    -
  • Lead-Free Status
    -
    PB free
    Lead Free
  • RoHS
    Non-Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Unknown
    Obsolete
  • Overview
    NAND01GW3A0AN6 Product overview

    SUMMARY DESCRIPTION The NAND Flash 528 Byte/ 264 Word Page is a family of non-volatile Flash memories that uses the Single Level Cell (SLC) NAND cell technology. It is referred to as the Small Page family. The de vices range from 128Mbits to 1Gbit and operate with either a 1.8V or 3V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. FEATURES SUMMARY ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost effective solutions for mass storage applications ■ NAND INTERFACE – x8 or x16 bus width – Multiplexed Address/ Data – Pinout compatibility for all densities ■ SUPPLY VOLTAGE – 1.8V device: VDD = 1.7 to 1.95V – 3.0V device: VDD = 2.7 to 3.6V ■ PAGE SIZE – x8 device: (512 + 16 spare) Bytes – x16 device: (256 + 8 spare) Words ■ BLOCK SIZE – x8 device: (16K + 512 spare) Bytes – x16 device: (8K + 256 spare) Words ■ PAGE READ / PROGRAM – Random access: 12µs (max) – Sequential access: 50ns (min) – Page program time: 200µs (typ) ■ COPY BACK PROGRAM MODE – Fast page copy without external buffering ■ FAST BLOCK ERASE – Block erase time: 2ms (Typ) ■ STATUS REGISTER ■ ELECTRONIC SIGNATURE ■ CHIP ENABLE ‘DON’T CARE’ OPTION – Simple interface with microcontroller ■ SERIAL NUMBER OPTION ■ HARDWARE DATA PROTECTION – Program/Erase locked during Power transitions ■ DATA INTEGRITY – 100,000 Program/Erase cycles – 10 years Data Retention ■ RoHS COMPLIANCE – Lead-Free Components are Compliant with the RoHS Directive ■ DEVELOPMENT TOOLS – Error Correction Code software and hardware models – Bad Blocks Management and Wear Leveling algorithms – File System OS Native reference software – Hardware simulation models

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NAND01GW3A0AN6 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:NAND01GW3A0AN6 Mfr.Part#:NAND01GW3A0AN6 Compare: Current Part Manufacturers:ST Microelectronics Category: Description:128Mbit, 256Mbit, 512Mbit, 1 Gbit (x8/x16)528Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
Image:TC58DVG02A1FT00 Mfr.Part#:TC58DVG02A1FT00 Compare: NAND01GW3A0AN6 VS TC58DVG02A1FT00 Manufacturers:Toshiba Category: Description:SLC NAND Flash Serial 3.3V 1G-bit 128M x 8 48Pin TSOP
Image:NAND01GW3B2CN6F Mfr.Part#:NAND01GW3B2CN6F Compare: NAND01GW3A0AN6 VS NAND01GW3B2CN6F Manufacturers:ST Microelectronics Category: Description:1 Gbit, 2 Gbit, 2112Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
Image:K9F1G08U0C-PCB0000 Mfr.Part#:K9F1G08U0C-PCB0000 Compare: NAND01GW3A0AN6 VS K9F1G08U0C-PCB0000 Manufacturers:Samsung Category:Flash Memory Description:16M X 8Bit NAND FLASH MEMORY