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N28F001BX-T150 vs TN28F001BX-T150 vs CAT28F001NA-15T Comparison

  • Hide Shared Attributes
    N28F001BX-T150
    N28F001BX-T150
    TN28F001BX-T150
    TN28F001BX-T150
    CAT28F001NA-15T
    CAT28F001NA-15T
  • Part No.
    N28F001BX-T150
    TN28F001BX-T150
    CAT28F001NA-15T
  • Description
    Flash Parallel 5V 1M-bit 128K x 8 150ns 32Pin PLCC
    1Mbit (128K x 8) BOOT BLOCK FLASH MEMORY
    Flash, 128KX8, 150ns, PQCC32, PLASTIC, LCC-32
  • Manufacturer
    Intel
    Intel
    Catalyst
  • Classification
    -
    -
    -
  • Reference Price(USD)
    -
    -
    -
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    QCCJ
    QCCJ
    QCCJ
  • RoHS
    Non-Compliant
    -
    -
  • Product Lifecycle Status
    Obsolete
    Obsolete
    Obsolete
  • Overview
    N28F001BX-T150 Product overview

    Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase. These devices aid the system designer by combining the functions of several components into one, making boot block flash an innovative alternative to EPROM and EEPROM or battery-backed static RAM. Many new and existing designs can take advantage of the 28F001BX’s integration of blocked architecture, automated electrical reprogramming, and standard processor interface.  High-Integration Blocked Architecture     One 8 KB Boot Block w/Lock Out     Two 4 KB Parameter Blocks     One 112 KB Main Block  100,000 Erase/Program Cycles Per Block  Simplified Program and Erase     Automated Algorithms via On-Chip Write State Machine (WSM)  SRAM-Compatible Write Interface  Deep Power-Down Mode     0.05 mA ICC Typical     0.8 mA IPP Typical  12.0V g5% VPP  High-Performance Read     70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time     5.0V g10% VCC  Hardware Data Protection Feature     Erase/Write Lockout during Power Transitions  Advanced Packaging, JEDEC Pinouts     32-Pin PDIP     32-Lead PLCC, TSOP  ETOXTM II Nonvolatile Flash Technology     EPROM-Compatible Process Base     High-Volume Manufacturing Experience  Extended Temperature Options

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    TN28F001BX-T150 Product overview

    Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase. These devices aid the system designer by combining the functions of several components into one, making boot block flash an innovative alternative to EPROM and EEPROM or battery-backed static RAM. Many new and existing designs can take advantage of the 28F001BX’s integration of blocked architecture, automated electrical reprogramming, and standard processor interface.  High-Integration Blocked Architecture     One 8 KB Boot Block w/Lock Out     Two 4 KB Parameter Blocks     One 112 KB Main Block  100,000 Erase/Program Cycles Per Block  Simplified Program and Erase     Automated Algorithms via On-Chip Write State Machine (WSM)  SRAM-Compatible Write Interface  Deep Power-Down Mode     0.05 mA ICC Typical     0.8 mA IPP Typical  12.0V g5% VPP  High-Performance Read     70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time     5.0V g10% VCC  Hardware Data Protection Feature     Erase/Write Lockout during Power Transitions  Advanced Packaging, JEDEC Pinouts     32-Pin PDIP     32-Lead PLCC, TSOP  ETOXTM II Nonvolatile Flash Technology     EPROM-Compatible Process Base     High-Volume Manufacturing Experience  Extended Temperature Options

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N28F001BX-T150 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:N28F001BX-T150 Mfr.Part#:N28F001BX-T150 Compare: Current Part Manufacturers:Intel Category: Description:Flash Parallel 5V 1M-bit 128K x 8 150ns 32Pin PLCC
Image:TN28F001BX-T150 Mfr.Part#:TN28F001BX-T150 Compare: N28F001BX-T150 VS TN28F001BX-T150 Manufacturers:Intel Category: Description:1Mbit (128K x 8) BOOT BLOCK FLASH MEMORY
Image:CAT28F001NA-15T Mfr.Part#:CAT28F001NA-15T Compare: N28F001BX-T150 VS CAT28F001NA-15T Manufacturers:Catalyst Category: Description:Flash, 128KX8, 150ns, PQCC32, PLASTIC, LCC-32