CAT28F001NA-90BT vs N28F001BX-B90 vs CAT28F001GA-90BT Comparison

DESCRIPTION The CAT28F001 is a high speed 128K X 8 bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after sale code updates. The CAT28F001 has a blocked architecture with one 8 KB Boot Block, two 4 KB Parameter Blocks and one 112 KB Main Block. The Boot Block section can be at the top or bottom of the memory map and includes a reprogramming write lock out feature to guarantee data integrity. It is designed to contain secure code which will bring up the system minimally and download code to other locations of CAT28F001. FEATURES ■Fast Read Access Time: 70/90/120/150 ns ■On-Chip Address and Data Latches ■Blocked Architecture — One 8 KB Boot Block w/ Lock Out • Top or Bottom Locations — Two 4 KB Parameter Blocks — One 112 KB Main Block ■Low Power CMOS Operation ■12.0V ±5% Programming and Erase Voltage ■Automated Program & Erase Algorithms ■High Speed Programming ■Commercial, Industrial and Automotive Temperature Ranges

Intel’s 28F001BX-B and 28F001BX-T combine the cost-effectiveness of Intel standard flash memory with features that simplify write and allow block erase. These devices aid the system designer by combining the functions of several components into one, making boot block flash an innovative alternative to EPROM and EEPROM or battery-backed static RAM. Many new and existing designs can take advantage of the 28F001BX’s integration of blocked architecture, automated electrical reprogramming, and standard processor interface.  High-Integration Blocked Architecture     One 8 KB Boot Block w/Lock Out     Two 4 KB Parameter Blocks     One 112 KB Main Block  100,000 Erase/Program Cycles Per Block  Simplified Program and Erase     Automated Algorithms via On-Chip Write State Machine (WSM)  SRAM-Compatible Write Interface  Deep Power-Down Mode     0.05 mA ICC Typical     0.8 mA IPP Typical  12.0V g5% VPP  High-Performance Read     70/75 ns, 90 ns, 120 ns, 150 ns Maximum Access Time     5.0V g10% VCC  Hardware Data Protection Feature     Erase/Write Lockout during Power Transitions  Advanced Packaging, JEDEC Pinouts     32-Pin PDIP     32-Lead PLCC, TSOP  ETOXTM II Nonvolatile Flash Technology     EPROM-Compatible Process Base     High-Volume Manufacturing Experience  Extended Temperature Options

DESCRIPTION The CAT28F001 is a high speed 128K X 8 bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after sale code updates. The CAT28F001 has a blocked architecture with one 8 KB Boot Block, two 4 KB Parameter Blocks and one 112 KB Main Block. The Boot Block section can be at the top or bottom of the memory map and includes a reprogramming write lock out feature to guarantee data integrity. It is designed to contain secure code which will bring up the system minimally and download code to other loca tions of CAT28F001. FEATURES ■Fast Read Access Time: 90/120 ns ■On-Chip Address and Data Latches ■Blocked Architecture — One 8 KB Boot Block w/ Lock Out • Top or Bottom Locations — Two 4 KB Parameter Blocks — One 112 KB Main Block ■Low Power CMOS Operation ■12.0V ±5% Programming and Erase Voltage ■Automated Program & Erase Algorithms ■High Speed Programming ■Commercial, Industrial and Automotive Temperature Ranges