N25Q256A13ESF40F vs N25Q256A13ESF40G vs S70FL256P0XMFI001 Comparison

Description The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Features The memory is organized as 512 (64KB) main sectors that are further divided into 16 subsectors each (8192 subsectors in total). The memory can be erased one 4KB subsector at a time, 64KB sectors at a time, or as a whole. The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command. The device also has the ability to pause and resume PROGRAM and ERASE cycles by us ing dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.

Description The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Features The memory is organized as 512 (64KB) main sectors that are further divided into 16 subsectors each (8192 subsectors in total). The memory can be erased one 4KB subsector at a time, 64KB sectors at a time, or as a whole. The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command. The device also has the ability to pause and resume PROGRAM and ERASE cycles by us ing dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.

The S70FL256P0XMFI001 is a 256MB CMOS Flash Memory with 104MHz SPI (serial peripheral interface) multi I/O bus. It is a dual die stack of two S25FL129P die. It features the one time programmable (OTP) area on each Flash die for permanent, secure identification and can be programmed and locked at the factory or by the customer. It also features single power supply operation of full voltage range - 2.7 to 3.6V read and write operations.

.

0.09µm MirrorBit® Process technology

.

Memory architecture - Uniform 64kB sectors

.

Accelerated programming mode via 9V W#/ACC pin

.

Quad page programming

.

Bulk erase function for each flash die

.

Cycling endurance - 100000 cycles per sector typical

.

Data retention - 20 years typical

.

JEDEC standard 2-byte electronic signature

.

Power saving standby mode - 160µA

.

W#/ACC Pin works in conjunction with status register bits to protect specified memory areas

.

Status register block protection bits in status