N25Q128A13ESE40F vs N25Q128A13ESE40G vs N25Q128A13ESE40E Comparison

Description The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) func tionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Features The memory is organized as 256 (64KB) main sectors that are further divided into 16 subsectors each (4096 subsectors in total). The memory can be erased one 4KB subsec tor at a time, 64KB sectors at a time, or as a whole. The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command. The device also has the ability to pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.

The N25Q128A13ESE40G is a first high-performance multiple input/output serial Flash Memory Device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.

.

SPI-compatible Serial Bus Interface

.

Dual/Quad I/O Instruction Provides Increased Throughput up to 432MHz

.

Supported Extended SPI, Dual I/O and Quad I/O Protocols

.

Execute-in-place mode for all three Protocols, Configurable Via Volatile or Non-volatile Registers

.

PROGRAM/ERASE SUSPEND Operations

.

Continuous read of entire memory via a single command, fast read, quad or dual output fast read

.

Flexible to Fit Application, Configurable Number of Dummy Cycles, Output Buffer Configurable

.

Software Reset

.

64-byte, User-lockable, One-time Programmable (OTP) Dedicated Area

.

Subsector erase 4kb uniform granularity blocks, Sector erase 64kb uniform granularity blocks

.

Hardware Write Protected Area Size Defined by Five Non-volatile Bits (BP0/BP1/BP2/BP3/TB)

.

JEDEC-standard 2-byte Signature (BA18h)

.

Unique ID Code - 17 RO Bytes, Two Extended Device ID Bytes to Identify Device Factory options

.

Minimum 100,000 ERASE Cycles per Sector

.

More Than 20 Years Data Retention

Description The N25Q is the first high-performance multiple input/output serial Flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) func tionality, advanced write protection mechanisms, and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations. Features The memory is organized as 256 (64KB) main sectors that are further divided into 16 subsectors each (4096 subsectors in total). The memory can be erased one 4KB subsec tor at a time, 64KB sectors at a time, or as a whole. The memory can be write protected by software through volatile and nonvolatile protection features, depending on the application needs. The protection granularity is of 64KB (sector granularity) for volatile protections The device has 64 one-time programmable (OTP) bytes that can be read and programmed with the READ OTP and PROGRAM OTP commands. These 64 bytes can also be permanently locked with a PROGRAM OTP command. The device also has the ability to pause and resume PROGRAM and ERASE cycles by using dedicated PROGRAM/ERASE SUSPEND and RESUME instructions.