N25Q128A11ESE40F N25Q128A11ESE40F VS N25Q128A11ESE40GN25Q128A11ESE40F vs N25Q128A11ESE40G Comparison
- Hide Shared Attributes
- Part No.
- N25Q128A11ESE40F
- N25Q128A11ESE40G
- Description
- NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 128M/64M/32M x 1/2Bit/4Bit 7ns 8Pin SOIC W T/R
- NOR Flash Serial-SPI 1.8V 128Mbit 128M/64M/32M x 1Bit/2Bit/4Bit 7ns 8Pin SOIC W Tube
- Classification
- Flash Memory
- Flash Memory
- Reference Price(USD)
- $1.822
- $3.064
- Inventory（pcs）
- 0
- 0
- Case/Package
- SOP-8
- SOIC-8
- Number of Pins
- 8
- 8
- Clock Speed
- -
- 108 MHz
- Memory Size
- -
- 16000000 B
- Number of Positions
- -
- 8
- Supply Voltage (DC)
- -
- 1.70V (min)
- Supply Current
- 20 mA
- 20 mA
- Operating Temperature
- -40℃ ~ 85℃
- -40℃ ~ 85℃ (TA)
- Size-Length
- -
- 5.49 mm
- Size-Width
- -
- 5.49 mm
- Size-Height
- -
- 1.91 mm
- Mounting Style
- -
- Surface Mount
- Packaging
- Tape & Reel (TR)
- Each
- REACH SVHC Compliance
- -
- No SVHC
- Lead-Free Status
- Lead Free
- Lead Free
- RoHS
- RoHS Compliant
- RoHS Compliant
- Product Lifecycle Status
- Active
- Active
- Access Time(Max)
- 7 ns
- 7 ns
- Operating Temperature (Max)
- 85 ℃
- 85 ℃
- Operating Temperature (Min)
- -40 ℃
- -40 ℃
- Supply Voltage
- 1.8 V
- 1.7V ~ 2V
- REACH SVHC Compliance Edition
- -
- 2014/06/16
- Supply Voltage (Max)
- -
- 2 V
- Supply Voltage (Min)
- -
- 1.7 V
- Overview
-
View all
-
N25Q128A11ESE40G Product overview
The N25Q128A11ESE40G is a Serial NOR Flash Memory can be writing protected by software through volatile and non-volatile protection features, depending on the application needs. The protection granularity is of 64kB for volatile protections. This is the high-performance multiple input/output serial flash memory device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for read and program operations. The memory is organized as 64kB main sectors that are further divided into 16 subsectors each. The memory can be erased one 4kB subsector at a time, 64kB sectors at a time or as a whole.
- .
- Dual/quad I/O instruction provides increased throughput up to 432MHz
- .
- Program/erase suspend operations
- .
- Minimum 100000 erase cycles per sector
- .
- More than 20 years data retention
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N25Q128A11ESE40F Alternative Parts
| Image | Part | Compare | Manufacturer | Category | Description | |
Image: |
Mfr.Part#:N25Q128A11ESE40F | Compare: Current Part | Manufacturers:Micron | Category:Flash Memory | Description:NOR Flash Serial (SPI, Dual SPI, Quad SPI) 1.8V 128M-bit 128M/64M/32M x 1/2Bit/4Bit 7ns 8Pin SOIC W T/R | |
Image: |
Mfr.Part#:N25Q128A11ESE40G | Compare: N25Q128A11ESE40F VS N25Q128A11ESE40G | Manufacturers:Micron | Category:Flash Memory | Description:NOR Flash Serial-SPI 1.8V 128Mbit 128M/64M/32M x 1Bit/2Bit/4Bit 7ns 8Pin SOIC W Tube |
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