

MT28GU01GAAA1EGC-0SIT vs PC28F00AG18FF vs MT28GU01GAAA2EGC-0SIT Comparison
- Hide Shared Attributes
- MT28GU01GAAA2EGC-0SIT
- Part No.
- MT28GU01GAAA1EGC-0SIT
- PC28F00AG18FF
- MT28GU01GAAA2EGC-0SIT
- Description
- Flash Memory, NOR, 1 Gbit, 64M x 16Bit, 133MHz, Parallel, BGA, 64Pins
- 128Mb, 256Mb, 512Mb, 1GB StrataFlash Memory
- NOR Flash Parallel 1.8V 1Gbit 64M x 16 64Pin TBGA
- Classification
- Flash Memory
- Flash Memory
- Flash Memory
- Reference Price(USD)
- $39.350
- -
- $11.890
- Inventory(pcs)
- 0
- 0
- 0
- Case/Package
- BGA-64
- BGA
- EBGA
- Number of Pins
- 64
- 64
- 64
- Number of Bits
- 16
- 16
- 16
- Clock Speed
- 133 MHz
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- -
- Number of Positions
- 64
- -
- -
- Access Time
- 96 ns
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- -
- Supply Voltage (DC)
- 1.70V (min)
- -
- -
- Supply Current
- 46 mA
- -
- -
- Operating Temperature
- -40℃ ~ 85℃
- -
- -40℃ ~ 85℃
- Mounting Style
- Surface Mount
- Surface Mount
- -
- Packaging
- Each
- Tape & Reel (TR)
- -
- REACH SVHC Compliance
- No SVHC
- -
- -
- Lead-Free Status
- -
- -
- RoHS
- RoHS Compliant
- RoHS Compliant
- RoHS Compliant
- Product Lifecycle Status
- Active
- Active
- Active
- Operating Temperature (Max)
- 85 ℃
- 85 ℃
- 85 ℃
- Operating Temperature (Min)
- -30 ℃
- -30 ℃
- -40 ℃
- Supply Voltage
- 1.7V ~ 2V
- -
- -
- Supply Voltage (Max)
- 2 V
- -
- -
- Supply Voltage (Min)
- 1.7 V
- -
- -
- Access Time(Max)
- 96 ns
- 96 ns
- 96 ns
- Overview
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MT28GU01GAAA1EGC-0SIT Product overview
The PC28F00AG18FE is a parallel StrataFlash Embedded Memory provides high read and write performance at low voltage on a 16-bit data bus. The multi-partition architecture provides read-while-write and read-while-erase capability, with individually erasable memory blocks sized for optimum code and data storage. Upon initial power-up or return from reset, the device defaults to asynchronous read mode. Configuring the read configuration register enables synchronous burst mode reads. In synchronous burst mode, output data is synchronized with a user-supplied clock signal. In continuous-burst mode, a data read can traverse partition boundaries. A wait signal simplifies synchronizing the CPU to the memory. One-time programmable area enables unique identification that can be used to increase security. Additionally, the individual block lock feature provides zero-latency block locking and unlocking to protect against unwanted program or erase of the array.
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- Quality and reliability
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- 20µs Typical program/erase suspend
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- Multi-level cell technology
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- Symmetrically-blocked array architecture
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- Status register for partition/device status
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PC28F00AG18FF Product overview
General Description Micron"s 65nm device is the latest generation of StrataFlash® wireless memory featuring flexible, multiple-partition, dual-operation architecture. The device provides high performance, asynchronous read mode and synchronous-burst read mode using 1.8V low-voltage, multilevel cell (MLC) technology. Features • High-Performance Read, Program and Erase – 96 ns initial read access – 108 MHz with zero wait-state synchronous burst reads: 7 ns clock-to-data output – 133 MHz with zero wait-state synchronous burst reads: 5.5 ns clock-to-data output – 8-, 16-, and continuous-word synchronous-burst Reads – Programmable WAIT configuration – Customer-configurable output driver impedance – Buffered Programming: 2.0 μs/Word (typ), 512-Mbit 65 nm – Block Erase: 0.9 s per block (typ) – 20 μs (typ) program/erase suspend • Architecture – 16-bit wide data bus – Multi-Level Cell Technology – Symmetrically-Blocked Array Architecture – 256-Kbyte Erase Blocks – 1-Gbit device: Eight 128-Mbit partitions – 512-Mbit device: Eight 64-Mbit partitions – 256-Mbit device: Eight 32-Mbit partitions – 128-Mbit device: Eight 16-Mbit partitions – Read-While-Program and Read-While-Erase – Status Register for partition/device status – Blank Check feature • Quality and Reliability – Expanded temperature: –30 °C to +85 °C – Minimum 100,000 erase cycles per block – 65nm Process Technology • Power – Core voltage: 1.7 V - 2.0 V – I/O voltage: 1.7 V - 2.0 V – Standby current: 60 μA (typ) for 512-Mbit, 65 nm – Deep Power-Down mode: 2 μA (typ) – Automatic Power Savings mode – 16-word synchronous-burst read current: 23 mA (typ) @ 108 MHz; 24 mA (typ) @ 133 MHz • Software – Micron® Flash data integrator (FDI) optimized – Basic command set (BCS) and extended command set (ECS) compatible – Common Flash interface (CFI) capable • Security – One-time programmable (OTP) space 64 unique factory device identifier bits 2112 user-programmable OTP bits – Absolute write protection: VPP = GND – Power-transition erase/program lockout – Individual zero latency block locking – Individual block lock-down • Density and packaging – 128Mb, 256Mb, 512Mbit, and 1-Gbit – Address-data multiplexed and non-multiplexed interfaces – 64-Ball Easy BGA
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MT28GU01GAAA1EGC-0SIT Alternative Parts
Image | Part | Compare | Manufacturer | Category | Description | |
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Mfr.Part#:MT28GU01GAAA1EGC-0SIT | Compare: Current Part | Manufacturers:Micron | Category:Flash Memory | Description:Flash memory, nor, 1 gbit, 64m x 16bit, 133mhz, parallel, bga, 64pins | |
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Mfr.Part#:PC28F00AG18FE | Compare: MT28GU01GAAA1EGC-0SIT VS PC28F00AG18FE | Manufacturers:Micron | Category:Flash Memory | Description:Nor flash parallel/serial 1.8v 1gbit 64m x 16bit 96ns 64pin bga tray | |
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Mfr.Part#:PC28F00AG18FF | Compare: MT28GU01GAAA1EGC-0SIT VS PC28F00AG18FF | Manufacturers:Micron | Category:Flash Memory | Description:128mb, 256mb, 512mb, 1gb strataflash memory | |
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Mfr.Part#:MT28GU01GAAA2EGC-0SIT | Compare: MT28GU01GAAA1EGC-0SIT VS MT28GU01GAAA2EGC-0SIT | Manufacturers:Micron | Category:Flash Memory | Description:Nor flash parallel 1.8v 1gbit 64m x 16 64pin tbga |