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MT28F128J3RG-12ET vs TE28F128J3C-120 vs MT28F128J3RG-12 Comparison

  • Hide Shared Attributes
    MT28F128J3RG-12ET
    MT28F128J3RG-12ET
    TE28F128J3C-120
    TE28F128J3C-120
    MT28F128J3RG-12
    MT28F128J3RG-12
  • Part No.
    MT28F128J3RG-12ET
    TE28F128J3C-120
    MT28F128J3RG-12
  • Description
    NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 120ns 56Pin TSOP-I Tray
    Intel StrataFlash® Memory
    NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 150ns 56Pin TSOP-I Tray
  • Manufacturer
    Micron
    Intel
    Micron
  • Classification
    Memory Chip
    -
    -
  • Reference Price(USD)
    -
    -
    -
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    TSOP1
    -
    TSOP1
  • ECCN Code
    -
    3A991.b.1.a
    -
  • Mounting Style
    -
    -
    Surface Mount
  • Packaging
    -
    -
    Tray
  • RoHS
    Non-Compliant
    -
    Non-Compliant
  • Product Lifecycle Status
    Unknown
    -
    Unknown
  • Overview
    MT28F128J3RG-12ET Product overview

    GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks. Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks. These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility. FEATURES • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb)    Sixty-four 128KB erase blocks (64Mb)    Thirty-two 128KB erase blocks (32Mb) • VCC, VCCQ, and VPEN voltages:    2.7V to 3.6V VCC operation    2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation    2.7V to 3.6V, or 5V VPEN application programming • Interface Asynchronous Page Mode Reads:    150ns/25ns read access time (128Mb)    120ns/25ns read access time (64Mb)    110ns/25ns read access time (32Mb) • Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition • Security OTP block feature Permanent block locking (Contact factory for availability) • Industry-standard pinout • Inputs and outputs are fully TTL-compatible • Common Flash Interface (CFI) and Scalable Command Set • Automatic write and erase algorithm • 4.7µs-per-byte effective programming time using write buffer • 128-bit protection register    64-bit unique device identifier    64-bit user-programmable OTP cells • 100,000 ERASE cycles per block • Automatic suspend options:    Block Erase Suspend-to-Read    Block Erase Suspend-to-Program    Program Suspend-to-Read

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    MT28F128J3RG-12 Product overview

    GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks. Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks. These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility. FEATURES • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb)    Sixty-four 128KB erase blocks (64Mb)    Thirty-two 128KB erase blocks (32Mb) • VCC, VCCQ, and VPEN voltages:    2.7V to 3.6V VCC operation    2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation    2.7V to 3.6V, or 5V VPEN application programming • Interface Asynchronous Page Mode Reads:    150ns/25ns read access time (128Mb)    120ns/25ns read access time (64Mb)    110ns/25ns read access time (32Mb) • Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition • Security OTP block feature Permanent block locking (Contact factory for availability) • Industry-standard pinout • Inputs and outputs are fully TTL-compatible • Common Flash Interface (CFI) and Scalable Command Set • Automatic write and erase algorithm • 4.7µs-per-byte effective programming time using write buffer • 128-bit protection register    64-bit unique device identifier    64-bit user-programmable OTP cells • 100,000 ERASE cycles per block • Automatic suspend options:    Block Erase Suspend-to-Read    Block Erase Suspend-to-Program    Program Suspend-to-Read

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MT28F128J3RG-12ET Alternative Parts

Image Part Compare Manufacturer Category Description
Image:MT28F128J3RG-12ET Mfr.Part#:MT28F128J3RG-12ET Compare: Current Part Manufacturers:Micron Category:Memory Chip Description:NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 120ns 56Pin TSOP-I Tray
Image:MT28F128J3RG-12 Mfr.Part#:MT28F128J3RG-12 Compare: MT28F128J3RG-12ET VS MT28F128J3RG-12 Manufacturers:Micron Category: Description:NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 150ns 56Pin TSOP-I Tray
Image:TE28F128J3C-120 Mfr.Part#:TE28F128J3C-120 Compare: MT28F128J3RG-12ET VS TE28F128J3C-120 Manufacturers:Intel Category: Description:Intel StrataFlash® Memory
Image:JS28F128J3C120 Mfr.Part#:JS28F128J3C120 Compare: MT28F128J3RG-12ET VS JS28F128J3C120 Manufacturers:Intel Category: Description:Flash Mem Parallel 3V/3.3V 128M-Bit 16M x 8/8M x 16 120ns 56Pin TSOP