

MT28F128J3RG-12ET vs TE28F128J3C-120 vs MT28F128J3RG-12 Comparison
- Hide Shared Attributes
- Part No.
- MT28F128J3RG-12ET
- TE28F128J3C-120
- MT28F128J3RG-12
- Description
- NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 120ns 56Pin TSOP-I Tray
- Intel StrataFlash® Memory
- NAND Flash Parallel 3.3V 128M-bit 16M x 8/8M x 16 150ns 56Pin TSOP-I Tray
- Classification
- Memory Chip
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- Reference Price(USD)
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- Inventory(pcs)
- 0
- 0
- 0
- Case/Package
- TSOP1
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- TSOP1
- ECCN Code
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- 3A991.b.1.a
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- Mounting Style
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- Surface Mount
- Packaging
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- Tray
- RoHS
- Non-Compliant
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- Non-Compliant
- Product Lifecycle Status
- Unknown
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- Unknown
- Overview
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MT28F128J3RG-12ET Product overview
GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks. Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks. These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility. FEATURES • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb) • VCC, VCCQ, and VPEN voltages: 2.7V to 3.6V VCC operation 2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation 2.7V to 3.6V, or 5V VPEN application programming • Interface Asynchronous Page Mode Reads: 150ns/25ns read access time (128Mb) 120ns/25ns read access time (64Mb) 110ns/25ns read access time (32Mb) • Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition • Security OTP block feature Permanent block locking (Contact factory for availability) • Industry-standard pinout • Inputs and outputs are fully TTL-compatible • Common Flash Interface (CFI) and Scalable Command Set • Automatic write and erase algorithm • 4.7µs-per-byte effective programming time using write buffer • 128-bit protection register 64-bit unique device identifier 64-bit user-programmable OTP cells • 100,000 ERASE cycles per block • Automatic suspend options: Block Erase Suspend-to-Read Block Erase Suspend-to-Program Program Suspend-to-Read
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MT28F128J3RG-12 Product overview
GENERAL DESCRIPTION The MT28F128J3 is a nonvolatile, electrically block erasable (Flash), programmable memory containing 134,217,728 bits organized as 16,777,218 bytes (8 bits) or 8,388,608 words (16 bits). This 128Mb device is organized as one hundred twenty-eight 128KB erase blocks. The MT28F640J3 contains 67,108,864 bits organized as 8,388,608 bytes (8 bits) or 4,194,304 words (16 bits). This 64Mb device is organized as sixty-four 128KB erase blocks. Similarly, the MT28F320J3 contains 33,554,432 bits organized as 4,194,304 bytes (8 bits) or 2,097,152 words (16 bits). This 32Mb device is organized as thirty-two 128KB erase blocks. These three devices feature in-system block locking. They also have common flash interface (CFI) that permits software algorithms to be used for entire families of devices. The software is device-independent, JEDEC ID-independent with forward and backward compatibility. FEATURES • x8/x16 organization • One hundred twenty-eight 128KB erase blocks (128Mb) Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb) • VCC, VCCQ, and VPEN voltages: 2.7V to 3.6V VCC operation 2.7V to 3.6V or 4.5V to 5.5V* VCCQ operation 2.7V to 3.6V, or 5V VPEN application programming • Interface Asynchronous Page Mode Reads: 150ns/25ns read access time (128Mb) 120ns/25ns read access time (64Mb) 110ns/25ns read access time (32Mb) • Enhanced data protection feature with VPEN = VSS Flexible sector locking Sector erase/program lockout during power transition • Security OTP block feature Permanent block locking (Contact factory for availability) • Industry-standard pinout • Inputs and outputs are fully TTL-compatible • Common Flash Interface (CFI) and Scalable Command Set • Automatic write and erase algorithm • 4.7µs-per-byte effective programming time using write buffer • 128-bit protection register 64-bit unique device identifier 64-bit user-programmable OTP cells • 100,000 ERASE cycles per block • Automatic suspend options: Block Erase Suspend-to-Read Block Erase Suspend-to-Program Program Suspend-to-Read
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MT28F128J3RG-12ET Alternative Parts
Image | Part | Compare | Manufacturer | Category | Description | |
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Mfr.Part#:MT28F128J3RG-12ET | Compare: Current Part | Manufacturers:Micron | Category:Memory Chip | Description:Nand flash parallel 3.3v 128m-bit 16m x 8/8m x 16 120ns 56pin tsop-i tray | |
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Mfr.Part#:MT28F128J3RG-12 | Compare: MT28F128J3RG-12ET VS MT28F128J3RG-12 | Manufacturers:Micron | Category: | Description:Nand flash parallel 3.3v 128m-bit 16m x 8/8m x 16 150ns 56pin tsop-i tray | |
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Mfr.Part#:TE28F128J3C-120 | Compare: MT28F128J3RG-12ET VS TE28F128J3C-120 | Manufacturers:Intel | Category: | Description:Intel strataflash® memory | |
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Mfr.Part#:JS28F128J3C120 | Compare: MT28F128J3RG-12ET VS JS28F128J3C120 | Manufacturers:Intel | Category: | Description:Flash mem parallel 3v/3.3v 128m-bit 16m x 8/8m x 16 120ns 56pin tsop |