Home  MRFE6S9125NR1  MRFE6S9125NR1 VS MRF5S9101NR1

MRFE6P3300HR3 vs MRFE6S9125NR1 vs MRFE6P3300HR5 Comparison

  • Hide Shared Attributes
    MRFE6P3300HR3
    MRFE6P3300HR3
    MRFE6S9125NR1
    MRFE6S9125NR1
    MRFE6P3300HR5
    MRFE6P3300HR5
  • Part No.
    MRFE6P3300HR3
    MRFE6S9125NR1
    MRFE6P3300HR5
  • Description
    RF Power Transistor,470 to 860MHz, 300W, Typ Gain in dB is 20.4 @ 860MHz, 32V, LDMOS, SOT1856
    RF Power Transistor,865 to 960MHz, 125W, Typ Gain in dB is 20.2 @ 880MHz, 28V, LDMOS, SOT1736
    FET RF 66V 863MHz NI-860C3
  • Manufacturer
    Nxp
    Nxp
    Nxp
  • Classification
    MOSFETs
    MOSFETs
    Transistors
  • Reference Price(USD)
    $187.563
    $69.220
    -
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    NI-860C3
    TO-270
    NI-860C3
  • Number of Pins
    5
    5
    5
  • Frequency
    857MHz ~ 863MHz
    880 MHz
    857MHz ~ 863MHz
  • Output Power
    270 W
    27 W
    270 W
  • Test Current
    1.6 A
    950 mA
    1.6 A
  • ECCN Code
    EAR99
    EAR99
    -
  • Current Rating
    10 µA
    10 µA
    -
  • Operating Temperature
    -65℃ ~ 225℃
    -65℃ ~ 225℃
    -
  • Halogen Free Status
    Halogen Free
    Halogen Free
    -
  • Gain
    20.4 dB
    20.2 dB
    20.4 dB
  • Mounting Style
    Screw
    Surface Mount
    -
  • Packaging
    Tape & Reel (TR)
    Tape & Reel (TR)
    Tape & Reel (TR)
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Obsolete
  • Operating Temperature (Min)
    -65 ℃
    -65 ℃
    -65 ℃
  • Voltage Rating
    66 V
    66 V
    66 V
  • Input Capacitance (Ciss)
    106pF @32V(Vds)
    350pF @28V(Vds)
    106pF @32V(Vds)
  • Supply Voltage
    32 V
    28 V
    -
  • Operating Temperature (Max)
    225 ℃
    225 ℃
    225 ℃
  • Overview
    MRFE6P3300HR3 Product overview

    Overview The MRFE6P3300HR3 is designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common-source amplifier applications in 32 volt analog or digital television transmitter equipment. MoreLess ## Features

    .
    Typical Narrowband Two-Tone Performance @ 860 MHz, VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP
    Power Gain: 20.4 dB Drain Efficiency: 44.8% IMD: –28.8 dBc
    .
    Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness
    .
    Characterized with Series Equivalent Large–Signal Impedance Parameters
    .
    Internally Matched for Ease of Use
    .
    Designed for Push-Pull Operation Only
    .
    Qualified Up to a Maximum of 32 VDD Operation
    .
    Integrated ESD Protection
    .
    RoHS Compliant
    .
    In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
    ## Features
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    MRFE6S9125NR1 Product overview

    Overview The MRFE6S9125NR1 and MRFE6S9125NBR1 are designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment. MoreLess ## Features

    .
    *N-CDMA Application**
    .
    Typical Single-Carrier N-CDMA Performance @ 800 MHz, VDD = 28 Volts, IDQ = 950 mA, Pout = 27 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
    Power Gain: 20.2 dB Drain Efficiency: 31% ACPR @ 750 kHz Offset: –45.7 dBc in 30 kHz Bandwidth
    .
    Capable of Handling 10:1 VSWR, @ 32 Vdc, 880 MHz, 3 dB Overdrive, Designed for Enhanced Ruggedness.
    .
    *GSM EDGE Application**
    .
    Typical GSM EDGE Performance: VDD = 28 Volts, IDQ = 700mA, Pout = 60 Watts Avg., Full Frequency Band (865-960 MHz or 920-960 MHz)
    Power Gain: 20 dB Drain Efficiency: 40% Spectral Regrowth @ 400 kHz Offset = –63 dBc Spectral Regrowth @ 600 kHz Offset = –78 dBc EVM: 1.8% rms
    .
    *GSM Application**
    .
    Typical GSM Performance: VDD = 28 Volts, IDQ = 700mA, Pout = 125 Watts, Full Frequency Band (920-960 MHz)
    Power Gain: 19 dB Drain Efficiency: 62%
    .
    Characterized with Series Equivalent Large-Signal Impedance Parameters
    .
    Internally Matched for Ease of Use
    .
    Integrated ESD Protection
    .
    225°C Capable Plastic Package
    .
    RoHS Compliant
    .
    In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
    ## Features
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    MRFE6P3300HR5 Product overview

    RF Mosfet LDMOS 32V 1.6A 857MHz ~ 863MHz 20.4dB 270W NI-860C3

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MRFE6S9125NR1 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:MRFE6S9125NR1 Mfr.Part#:MRFE6S9125NR1 Compare: Current Part Manufacturers:Nxp Category:MOSFETs Description:Rf power transistor,865 to 960mhz, 125w, typ gain in db is 20.2 @ 880mhz, 28v, ldmos, sot1736
Image:MRFE6S9125NBR1 Mfr.Part#:MRFE6S9125NBR1 Compare: MRFE6S9125NR1 VS MRFE6S9125NBR1 Manufacturers:Nxp Category:MOSFETs Description:Rf power transistor,865 to 960mhz, 125w, typ gain in db is 20.2 @ 880mhz, 28v, ldmos, sot1735
Image:MRF5S9101NR1 Mfr.Part#:MRF5S9101NR1 Compare: MRFE6S9125NR1 VS MRF5S9101NR1 Manufacturers:Nxp Category:Transistors Description:Mosfet n-ch 100w 26v to-270-4
Image:MRFE6P3300HR3 Mfr.Part#:MRFE6P3300HR3 Compare: MRFE6S9125NR1 VS MRFE6P3300HR3 Manufacturers:Nxp Category:MOSFETs Description:Rf power transistor,470 to 860mhz, 300w, typ gain in db is 20.4 @ 860mhz, 32v, ldmos, sot1856