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MJE3055T vs MJE3055TG vs MJE3055T Comparison

  • Hide Shared Attributes
    MJE3055T
    MJE3055T
    MJE3055TG
    MJE3055TG
  • Part No.
    MJE3055T
    MJE3055TG
    MJE3055T
  • Description
    Trans GP BJT NPN 60V 10A 75000mW 3Pin(3+Tab) TO-220 Tube
    TO-220AB NPN 60V 10A
    Trans GP BJT NPN 60V 10A 75000mW 3Pin(3+Tab) TO-220 Tube
  • Manufacturer
    St microelectronics
    On semiconductor
    St microelectronics
  • Classification
    BJTs
    BJTs
    BJTs
  • Reference Price(USD)
    $0.205
    $0.275
    $0.205
  • Inventory(pcs)
    15.2k
    1.4k
    15.2k
  • Case/Package
    TO-220-3
    TO-220-3
    TO-220-3
  • Number of Pins
    3
    3
    3
  • Frequency
    2 MHz
    2 MHz
    2 MHz
  • Power Dissipation
    75 W
    75 W
    75 W
  • Number of Positions
    3
    3
    3
  • Thermal Resistance
    -
    1.67℃/W (RθJC)
    -
  • Voltage Rating (DC)
    60.0 V
    60.0 V
    60.0 V
  • Polarity
    NPN
    NPN
    NPN
  • Breakdown Voltage (Collector to Emitter)
    60 V
    60 V
    60 V
  • Continuous Collector Current
    -
    10A
    -
  • Minimum Packing Quantity
    -
    -
    -
  • hFE Min
    20 @4A, 4V
    20 @4A, 4V
    20 @4A, 4V
  • ECCN Code
    -
    EAR99
    -
  • hFE Max
    70
    -
    70
  • Current Rating
    10.0 A
    10.0 A
    10.0 A
  • Material
    Silicon
    Silicon
    Silicon
  • Operating Temperature
    150℃ (TJ)
    -55℃ ~ 150℃
    150℃ (TJ)
  • Size-Length
    10.4 mm
    10.28 mm
    10.4 mm
  • Size-Width
    4.6 mm
    4.82 mm
    4.6 mm
  • Size-Height
    9.15 mm
    9.28 mm
    9.15 mm
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
    Tube
  • REACH SVHC Compliance
    No SVHC
    -
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    150 ℃
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Power Dissipation (Max)
    75000 mW
    75000 mW
    75000 mW
  • REACH SVHC Compliance Edition
    2014/06/16
    2015/12/17
    2014/06/16
  • Transistor Gender
    NPN
    NPN
    NPN
  • Industrial-Spec
    Yes
    Yes
    Yes
  • Input Power (Max)
    75 W
    75 W
    75 W
  • DC Current Gain (hFE)
    400
    2
    400
  • Overview
    MJE3055T Product overview

    The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.

    .
    Complementary to the MJE2955T
    .
    Well-controlled hFE parameter for increased reliability
    View all
    MJE3055TG Product overview

    **NPN Power Transistors, ON Semiconductor** These ON Semiconductor transistors can amplify analog or digital signals. They can also switch DC or function as an oscillator.

    View all
    MJE3055T Product overview

    The MJE3055T is a 60V Silicon Epitaxial Base NPN Power Transistor intended for power switching circuits and general purpose amplifiers. Fast switching times and very low saturation voltage resulting in reduced switching and conduction losses.

    .
    Complementary to the MJE2955T
    .
    Well-controlled hFE parameter for increased reliability
    View all

MJE3055T Alternative Parts

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Image:MJE3055T Mfr.Part#:MJE3055T Compare: Current Part Manufacturers:St microelectronics Category:BJTs Description:Trans gp bjt npn 60v 10a 75000mw 3pin(3+tab) to-220 tube
Image:BD910 Mfr.Part#:BD910 Compare: MJE3055T VS BD910 Manufacturers:St microelectronics Category:BJTs Description:Trans gp bjt pnp 80v 15a 3pin(3+tab) to-220 tube
Image:2N4922G Mfr.Part#:2N4922G Compare: MJE3055T VS 2N4922G Manufacturers:On semiconductor Category:BJTs Description:To-225 npn 60v 1a
Image:MJE3055TG Mfr.Part#:MJE3055TG Compare: MJE3055T VS MJE3055TG Manufacturers:On semiconductor Category:BJTs Description:To-220ab npn 60v 10a