Home  M50FLW080AK5  M50FLW080AK5 VS M50FW080K5G

M50FLW080AK5 vs M50FLW080AK5TG vs M50FLW080BK5TP Comparison

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    M50FLW080AK5
    M50FLW080AK5
    M50FLW080AK5TG
    M50FLW080AK5TG
    M50FLW080BK5TP
    M50FLW080BK5TP
  • Part No.
    M50FLW080AK5
    M50FLW080AK5TG
    M50FLW080BK5TP
  • Description
    8Mbit (13 x 64KByte Blocks + 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
    8Mbit (13 x 64KByte Blocks 3 x 16 x 4KByte Sectors), 3V Supply Firmware Hub / Low Pin Count Flash Memory
    1MX8 FLASH 3V PROM, 11ns, PQCC32, ROHS COMPLIANT, PLASTIC, LCC-32
  • Manufacturer
    St microelectronics
    St microelectronics
    St microelectronics
  • Classification
    -
    -
    -
  • Reference Price(USD)
    -
    -
    -
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    QCCJ
    PLCC-32
    QCCJ
  • Mounting Style
    -
    Surface Mount
    -
  • RoHS
    -
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Unknown
    Unknown
    Obsolete
  • Operating Temperature (Max)
    -
    85 ℃
    -
  • Operating Temperature (Min)
    -
    -20 ℃
    -
  • Overview
    M50FLW080AK5 Product overview

    Summary description The M50FLW080 is a 8 Mbit (1M x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing on production lines, an optional 12V power supply can be used to reduce the erasing and programming time. Feature summary ■ Flash memory    – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1) used in PC BIOS applications    – 5-signal communication interface supporting Read and Write operations    – 5 additional general-purpose inputs for platform design flexibility    – Synchronized with 33 MHz PCI clock ■ 16 blocks of 64 Kbytes    – 13 blocks of 64 Kbytes each    – 3 blocks, subdivided into 16 uniform sectors of 4 Kbytes each       Two blocks at the top and one at the bottom (M50FLW080A)       One block at the top and two at the bottom (M50FLW080B) ■ Enhanced security    – Hardware Write Protect pins for block protection    – Register-based Read and Write Protection    – Individual Lock Register for each 4 KByte sector ■ Supply voltage    – VCC = 3.0 to 3.6 V for Program, Erase and Read operations    – VPP = 12 V for Fast Program and Erase ■ Two interfaces    – Auto Detection of Firmware Hub (FWH) or Low Pin Count (LPC) memory cycles for embedded operation with PC chipsets    – Address/Address Multiplexed (A/A Mux) interface for programming equipment compatibility. ■ Programming time: 10 µs typical ■ Program/Erase Controller    – Embedded Program and Erase algorithms    – Status Register bits ■ Program/Erase Suspend    – Read other Blocks/Sectors during Program Suspend    – Program other Blocks/Sectors during Erase Suspend ■ ELectronic signature    – Manufacturer Code: 20h    – Device Code (M50FLW080A): 80h    – Device Code (M50FLW080B): 81h ■ Packages    – ECOPACK® (RoHS compliant)

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    M50FLW080AK5TG Product overview

    Summary description The M50FLW080 is a 8 Mbit (1M x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing on production lines, an optional 12V power supply can be used to reduce the erasing and programming time. Feature summary ■ Flash memory    – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1) used in PC BIOS applications    – 5-signal communication interface supporting Read and Write operations    – 5 additional general-purpose inputs for platform design flexibility    – Synchronized with 33 MHz PCI clock ■ 16 blocks of 64 Kbytes    – 13 blocks of 64 Kbytes each    – 3 blocks, subdivided into 16 uniform sectors of 4 Kbytes each       Two blocks at the top and one at the bottom (M50FLW080A)       One block at the top and two at the bottom (M50FLW080B) ■ Enhanced security    – Hardware Write Protect pins for block protection    – Register-based Read and Write Protection    – Individual Lock Register for each 4 KByte sector ■ Supply voltage    – VCC = 3.0 to 3.6 V for Program, Erase and Read operations    – VPP = 12 V for Fast Program and Erase ■ Two interfaces    – Auto Detection of Firmware Hub (FWH) or Low Pin Count (LPC) memory cycles for embedded operation with PC chipsets    – Address/Address Multiplexed (A/A Mux) interface for programming equipment compatibility. ■ Programming time: 10 µs typical ■ Program/Erase Controller    – Embedded Program and Erase algorithms    – Status Register bits ■ Program/Erase Suspend    – Read other Blocks/Sectors during Program Suspend    – Program other Blocks/Sectors during Erase Suspend ■ ELectronic signature    – Manufacturer Code: 20h    – Device Code (M50FLW080A): 80h    – Device Code (M50FLW080B): 81h ■ Packages    – ECOPACK® (RoHS compliant)

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    M50FLW080BK5TP Product overview

    Summary description The M50FLW080 is a 8 Mbit (1M x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (3.0 to 3.6V) supply. For fast programming and fast erasing on production lines, an optional 12V power supply can be used to reduce the erasing and programming time. Feature summary ■ Flash memory    – Compatible with either the LPC interface or the FWH interface (Intel Spec rev1.1) used in PC BIOS applications    – 5-signal communication interface supporting Read and Write operations    – 5 additional general-purpose inputs for platform design flexibility    – Synchronized with 33 MHz PCI clock ■ 16 blocks of 64 Kbytes    – 13 blocks of 64 Kbytes each    – 3 blocks, subdivided into 16 uniform sectors of 4 Kbytes each       Two blocks at the top and one at the bottom (M50FLW080A)       One block at the top and two at the bottom (M50FLW080B) ■ Enhanced security    – Hardware Write Protect pins for block protection    – Register-based Read and Write Protection    – Individual Lock Register for each 4 KByte sector ■ Supply voltage    – VCC = 3.0 to 3.6 V for Program, Erase and Read operations    – VPP = 12 V for Fast Program and Erase ■ Two interfaces    – Auto Detection of Firmware Hub (FWH) or Low Pin Count (LPC) memory cycles for embedded operation with PC chipsets    – Address/Address Multiplexed (A/A Mux) interface for programming equipment compatibility. ■ Programming time: 10 µs typical ■ Program/Erase Controller    – Embedded Program and Erase algorithms    – Status Register bits ■ Program/Erase Suspend    – Read other Blocks/Sectors during Program Suspend    – Program other Blocks/Sectors during Erase Suspend ■ ELectronic signature    – Manufacturer Code: 20h    – Device Code (M50FLW080A): 80h    – Device Code (M50FLW080B): 81h ■ Packages    – ECOPACK® (RoHS compliant)

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M50FLW080AK5 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:M50FLW080AK5 Mfr.Part#:M50FLW080AK5 Compare: Current Part Manufacturers:St microelectronics Category: Description:8mbit (13 x 64kbyte blocks + 3 x 16 x 4kbyte sectors), 3v supply firmware hub / low pin count flash memory
Image:M50FLW080AK5TG Mfr.Part#:M50FLW080AK5TG Compare: M50FLW080AK5 VS M50FLW080AK5TG Manufacturers:St microelectronics Category: Description:8mbit (13 x 64kbyte blocks 3 x 16 x 4kbyte sectors), 3v supply firmware hub / low pin count flash memory
Image:M50FW080K5TG Mfr.Part#:M50FW080K5TG Compare: M50FLW080AK5 VS M50FW080K5TG Manufacturers:St microelectronics Category:Flash Memory Description:8mbit 1mb x8, uniform block 3v supply firmware hub flash memory
Image:M50FW080K5G Mfr.Part#:M50FW080K5G Compare: M50FLW080AK5 VS M50FW080K5G Manufacturers:St microelectronics Category:Memory Chip Description:8mbit 1mb x8, uniform block 3v supply firmware hub flash memory