Home  K6T1008C2E-GB70  K6T1008C2E-GB70 VS M5M51008CFP-70H

K6T1008C2E-GB70 vs KM681000BLG-7L vs R1LP0108ESN-7SR#B0 Comparison

  • Hide Shared Attributes
    K6T1008C2E-GB70
    K6T1008C2E-GB70
    KM681000BLG-7L
    KM681000BLG-7L
    R1LP0108ESN-7SR#B0
    R1LP0108ESN-7SR#B0
  • Part No.
    K6T1008C2E-GB70
    KM681000BLG-7L
    R1LP0108ESN-7SR#B0
  • Description
    SRAM Chip Async Single 5V 1M-bit 128K x 8 70ns 32Pin SOP
    SRAM Chip Async Single 5V 1M-Bit 128K x 8 70ns 32Pin SOP T/R
    SRAM Chip Async Single 5V 1M-Bit 128KWord x 8 70ns 32Pin SOP Tube
  • Manufacturer
    Samsung
    Samsung
    Renesas electronics
  • Classification
    RAM Memory
    RAM Memory
    RAM Memory
  • Reference Price(USD)
    $2.230
    $6.490
    $9.073
  • Inventory(pcs)
    3.9k
    3
    0
  • Case/Package
    SOP
    SOP
    SOP
  • Number of Pins
    -
    -
    32
  • Size-Height
    -
    -
    2.75 mm
  • Mounting Style
    Surface Mount
    Surface Mount
    -
  • Packaging
    -
    -
    Tray
  • Lead-Free Status
    -
    -
    Lead Free
  • RoHS
    RoHS Compliant
    -
    RoHS Compliant
  • Product Lifecycle Status
    Obsolete
    Obsolete
    Active
  • Supply Voltage
    5 V
    5 V
    -
  • Overview
    K6T1008C2E-GB70 Product overview

    GENERAL DESCRIPTION The K6T1008C2E families are fabricated by SAMSUNGs advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current. FEATURES ·Process Technology: TFT ·Organization: 128Kx8 ·Power Supply Voltage: 4.5~5.5V ·Low Data Retention Voltage: 2V(Min) ·Three state output and TTL Compatible ·Package Type: 32-DIP-600, 32-SOP-525,32-TSOP1-0820F/R

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    KM681000BLG-7L Product overview

    GENERAL DESCRIPTION The KM681000B family is fabricated by SAMSUNG"s advanced CMOS process technology. The family can support various operating temperature ranges and have various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current. FEATURES Process Technology : 0.6§›CMOS Organization : 128Kx8 Power Supply Voltage : Single 5.0V ¡¾10% Low Data Retention Voltage : 2V(Min) Three state output and TTL Compatible Package Type : JEDEC Standard 32-DIP, 32-SOP, 32-TSOP I R/F

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    R1LP0108ESN-7SR#B0 Product overview

    SRAM Memory IC 1Mb (128K x 8) Parallel 70ns 32-SOP

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K6T1008C2E-GB70 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:K6T1008C2E-GB70 Mfr.Part#:K6T1008C2E-GB70 Compare: Current Part Manufacturers:Samsung Category:RAM Memory Description:Sram chip async single 5v 1m-bit 128k x 8 70ns 32pin sop
Image:KM681000BLG-7L Mfr.Part#:KM681000BLG-7L Compare: K6T1008C2E-GB70 VS KM681000BLG-7L Manufacturers:Samsung Category:RAM Memory Description:Sram chip async single 5v 1m-bit 128k x 8 70ns 32pin sop t/r
Image:M5M51008CFP-70H Mfr.Part#:M5M51008CFP-70H Compare: K6T1008C2E-GB70 VS M5M51008CFP-70H Manufacturers:Mitsubishi Category:RAM Memory Description:Standard sram, 128kx8, 70ns, cmos, pdso32, 0.525inch, sop-32
Image:M5M51008BFP-70LL Mfr.Part#:M5M51008BFP-70LL Compare: K6T1008C2E-GB70 VS M5M51008BFP-70LL Manufacturers:Mitsubishi Category:RAM Memory Description:Sram chip async single 5v 1m-bit 128k x 8 70ns 32pin sop