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JANTX2N3501 vs JANTXV2N3501 vs 2N3501 Comparison

  • Hide Shared Attributes
    JANTX2N3501
    JANTX2N3501
    JANTXV2N3501
    JANTXV2N3501
    2N3501
    2N3501
  • Part No.
    JANTX2N3501
    JANTXV2N3501
    2N3501
  • Description
    JANTX Series 150V 300mA Through Hole NPN Silicon Transistor - TO-39
    TO-39 NPN 150V 0.3A
    2N3501 Series 150V 300mA Through Hole NPN Silicon Transistor - TO-39-3
  • Manufacturer
    Microsemi
    Microsemi
    Microsemi
  • Classification
    BJTs
    BJTs
    BJTs
  • Reference Price(USD)
    $6.567
    $18.850
    $7.803
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    TO-39-3
    TO-39
    TO-205
  • Number of Pins
    3
    3
    3
  • Power Dissipation
    1 W
    1 W
    1 W
  • Polarity
    -
    NPN
    -
  • Breakdown Voltage (Collector to Emitter)
    150 V
    150 V
    150 V
  • hFE Min
    100 @150mA, 10V
    100 @150mA, 10V
    100 @150mA, 10V
  • ECCN Code
    EAR99
    -
    EAR99
  • Continuous Collector Current
    -
    0.3A
    -
  • Operating Temperature
    -65℃ ~ 200℃ (TJ)
    -65℃ ~ 200℃ (TJ)
    -65℃ ~ 200℃ (TJ)
  • Material
    Silicon
    Silicon
    Silicon
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Bulk
    Bag
    Bulk
  • Lead-Free Status
    Contains Lead
    Contains Lead
  • RoHS
    Non-Compliant
    Non-Compliant
    Non-Compliant
  • Product Lifecycle Status
    Active
    Active
    Unknown
  • Power Dissipation (Max)
    1000 mW
    1000 mW
    1000 mW
  • Operating Temperature (Max)
    200 ℃
    200 ℃
    200 ℃
  • Operating Temperature (Min)
    -65 ℃
    -65 ℃
    -65 ℃
  • Transistor Gender
    -
    NPN
    -
  • Input Power (Max)
    1 W
    1 W
    1 W
  • Overview
    JANTX2N3501 Product overview

    This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications.  These devices are also available in TO-5 and low profile U4 packaging.  Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

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    JANTXV2N3501 Product overview

    This family of 2N3498 thru 2N3501 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications.  These devices are also available in TO-5 and low profile U4 packaging.  Microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

    View all
    2N3501 Product overview

    Implement this versatile NPN 2N3501 GP BJT from Microsemi into an electronic circuit to be used as a current or voltage-controlled switch or amplifier. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 1000 mW. This bipolar junction transistor has a minimum operating temperature of -65 °C and a maximum of 200 °C. It has a maximum collector emitter voltage of 150 V and a maximum emitter base voltage of 6 V.

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JANTXV2N3501 Alternative Parts

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Image:JANTXV2N3501 Mfr.Part#:JANTXV2N3501 Compare: Current Part Manufacturers:Microsemi Category:BJTs Description:To-39 npn 150v 0.3a
Image:JANTX2N3501 Mfr.Part#:JANTX2N3501 Compare: JANTXV2N3501 VS JANTX2N3501 Manufacturers:Microsemi Category:BJTs Description:Jantx series 150v 300ma through hole npn silicon transistor - to-39
Image:JANTX2N3501L Mfr.Part#:JANTX2N3501L Compare: JANTXV2N3501 VS JANTX2N3501L Manufacturers:Microsemi Category:BJTs Description:Trans gp bjt npn 150v 0.3a 3pin to-5
Image:JAN2N3501 Mfr.Part#:JAN2N3501 Compare: JANTXV2N3501 VS JAN2N3501 Manufacturers:Microsemi Category:BJTs Description:Trans gp bjt npn 150v 0.3a 3pin to-39