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IXTH3N120 vs IXTP3N120 vs IXFP3N120 Comparison

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    IXTH3N120
    IXTH3N120
    IXTP3N120
    IXTP3N120
    IXFP3N120
    IXFP3N120
  • Part No.
    IXTH3N120
    IXTP3N120
    IXFP3N120
  • Description
    Trans MOSFET N-CH 1.2kV 3A 3Pin(3+Tab) TO-247
    TO-220 N-CH 1200V 3A
    Trans MOSFET N-CH 1.2kV 3A 3Pin(3+Tab) TO-220
  • Manufacturer
    IXYS Semiconductor
    IXYS Semiconductor
    IXYS Semiconductor
  • Classification
    MOSFETs
    High Voltage MOS
    MOSFETs
  • Reference Price(USD)
    $4.080
    $2.490
    $2.796
  • Inventory(pcs)
    0
    0
    307
  • Case/Package
    TO-247-3
    TO-220-3
    TO-220-3
  • Number of Pins
    3
    3
    3
  • Number of Channels
    1
    -
    -
  • Power Dissipation
    150 W
    200 W
    200 W
  • Number of Positions
    -
    3
    3
  • Rise Time
    15 ns
    35 ns
    15 ns
  • Voltage Rating (DC)
    -
    1.20 kV
    -
  • Drain to Source Resistance (on) (Rds)
    4.5 Ω
    4.5 Ω
    4.5 Ω
  • Polarity
    -
    N-Channel
    N-Channel
  • Drain to Source Voltage (Vds)
    1200 V
    1.2 kV
    120 V
  • Threshold Voltage
    4.5 V
    5 V
    5 V
  • Reverse recovery time
    -
    700 ns
    -
  • Current Rating
    -
    3.00 A
    -
  • Breakdown Voltage (Drain to Source)
    1200 V
    -
    -
  • Continuous Drain Current (Ids)
    -
    3.00 A
    3.00 A
  • Operating Temperature
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
  • Size-Length
    16.26 mm
    -
    -
  • Size-Width
    5.3 mm
    -
    -
  • Size-Height
    21.46 mm
    -
    -
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
    Tube
  • REACH SVHC Compliance
    -
    No SVHC
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Input Capacitance (Ciss)
    1300pF @25V(Vds)
    1350pF @25V(Vds)
    1050pF @25V(Vds)
  • Power Dissipation (Max)
    200W (Tc)
    200W (Tc)
    200W (Tc)
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    150 ℃
  • Input Power (Max)
    -
    200 W
    200 W
  • REACH SVHC Compliance Edition
    -
    2015/06/15
    2015/06/15
  • Operating Temperature (Min)
    55 ℃
    -55 ℃
    -55 ℃
  • Fall Time
    18 ns
    -
    18 ns
  • Transistor Gender
    -
    N Channel
    N Channel
  • Industrial-Spec
    -
    Yes
    -
  • Overview
    IXTH3N120 Product overview

    N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-247 (IXTH)

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    IXTP3N120 Product overview

    The IXTP3N120 is a high voltage N-channel enhancement-mode Power MOSFET features avalanche rated and rated for unclamped inductive load switching (UIS).

    .
    High dV/dt
    .
    International standard package
    .
    Low RDS (ON)
    .
    UL94V-0 Flammability rating
    .
    Easy to mount
    .
    Space savings
    .
    High power density
    View all
    IXFP3N120 Product overview

    N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-220AB

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IXTP3N120 Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IXTP3N120 Mfr.Part#:IXTP3N120 Compare: Current Part Manufacturers:IXYS Semiconductor Category:High Voltage MOS Description:TO-220 N-CH 1200V 3A
Image:IXFP3N120 Mfr.Part#:IXFP3N120 Compare: IXTP3N120 VS IXFP3N120 Manufacturers:IXYS Semiconductor Category:MOSFETs Description:Trans MOSFET N-CH 1.2kV 3A 3Pin(3+Tab) TO-220
Image:IXFA3N120 Mfr.Part#:IXFA3N120 Compare: IXTP3N120 VS IXFA3N120 Manufacturers:IXYS Semiconductor Category:MOSFETs Description:IXFA Series 1200V 4.5Ω SMT N-Channel HiPerFET Power Mosfet - TO-263-3
Image:IXTH3N120 Mfr.Part#:IXTH3N120 Compare: IXTP3N120 VS IXTH3N120 Manufacturers:IXYS Semiconductor Category:MOSFETs Description:Trans MOSFET N-CH 1.2kV 3A 3Pin(3+Tab) TO-247