We are Apogeeweb Semiconductor Electronic

WELCOME TO OUR BLOG

Home  IXFK36N60P  IXFK36N60P VS IXFH36N60P

IXFK36N60P vs IXFT36N60P vs IXFH36N60P Comparison

  • Hide Shared Attributes
    IXFK36N60P
    IXFK36N60P
    IXFT36N60P
    IXFT36N60P
    IXFH36N60P
    IXFH36N60P
  • Part No.
    IXFK36N60P
    IXFT36N60P
    IXFH36N60P
  • Description
    Trans MOSFET N-CH 600V 36A 3Pin(3+Tab) TO-264AA
    IXYS SEMICONDUCTOR IXFT36N60P Power MOSFET, PolarFET, N Channel, 36A, 600V, 190mohm, 10V, 5V
    IXYS SEMICONDUCTOR IXFH36N60P Power MOSFET, N Channel, 36A, 600V, 190mohm, 10V, 5V
  • Manufacturer
    IXYS Semiconductor
    IXYS Semiconductor
    IXYS Semiconductor
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $6.224
    $6.809
    $4.332
  • Inventory(pcs)
    0
    0
    335
  • Case/Package
    TO-264-3
    TO-268-3
    TO-247-3
  • Number of Pins
    3
    3
    3
  • Number of Channels
    1
    -
    -
  • Power Dissipation
    650 W
    650 W
    650 W
  • Number of Positions
    -
    -
    3
  • Rise Time
    25 ns
    -
    25 ns
  • Input Capacitance
    5.80 nF
    5.80 nF
    5.80 nF
  • Voltage Rating (DC)
    600 V
    600 V
    600 V
  • Drain to Source Resistance (on) (Rds)
    190 mΩ
    190 mΩ
    0.19 Ω
  • Polarity
    N-Channel
    N-Channel
    N-Channel
  • Reverse recovery time
    -
    200 ns
    200 ns
  • Threshold Voltage
    -
    5 V
    5 V
  • Drain to Source Voltage (Vds)
    600 V
    600 V
    600 V
  • Current Rating
    36.0 A
    36.0 A
    36.0 A
  • Breakdown Voltage (Drain to Source)
    600 V
    600 V
    600 V
  • Continuous Drain Current (Ids)
    36.0 A
    36.0 A
    36.0 A
  • Operating Temperature
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
  • Gate Charge
    102 nC
    102 nC
    102 nC
  • Size-Length
    19.96 mm
    -
    16.26 mm
  • Size-Width
    5.13 mm
    -
    5.3 mm
  • Size-Height
    26.16 mm
    -
    21.46 mm
  • Mounting Style
    Through Hole
    Surface Mount
    Through Hole
  • Packaging
    Tube
    Tube
    Tube
  • REACH SVHC Compliance
    -
    -
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Industrial-Spec
    -
    -
    Yes
  • Operating Temperature (Min)
    55 ℃
    -55 ℃
    -55 ℃
  • Input Capacitance (Ciss)
    5800pF @25V(Vds)
    5800pF @25V(Vds)
    5800pF @25V(Vds)
  • Power Dissipation (Max)
    650W (Tc)
    650W (Tc)
    650W (Tc)
  • Fall Time
    22 ns
    -
    22 ns
  • REACH SVHC Compliance Edition
    -
    2015/06/15
    2015/06/15
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    150 ℃
  • Input Power (Max)
    650 W
    650 W
    -
  • Transistor Gender
    -
    -
    N Channel
  • Overview
    IXFK36N60P Product overview

    N-Channel 600V 36A (Tc) 650W (Tc) Through Hole TO-264AA (IXFK)

    View all
    View all
    IXFH36N60P Product overview

    The IXFH36N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.

    .
    Unclamped inductive switching (UIS) rated
    .
    International standard package
    .
    Low package inductance
    .
    Easy to mount
    .
    Space savings
    .
    High power density
    View all

IXFK36N60P Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IXFK36N60P Mfr.Part#:IXFK36N60P Compare: Current Part Manufacturers:IXYS Semiconductor Category:MOSFETs Description:Trans MOSFET N-CH 600V 36A 3Pin(3+Tab) TO-264AA
Image:IXFH36N60P Mfr.Part#:IXFH36N60P Compare: IXFK36N60P VS IXFH36N60P Manufacturers:IXYS Semiconductor Category:MOSFETs Description:IXYS SEMICONDUCTOR IXFH36N60P Power MOSFET, N Channel, 36A, 600V, 190mohm, 10V, 5V
Image:IXFT36N60P Mfr.Part#:IXFT36N60P Compare: IXFK36N60P VS IXFT36N60P Manufacturers:IXYS Semiconductor Category:MOSFETs Description:IXYS SEMICONDUCTOR IXFT36N60P Power MOSFET, PolarFET, N Channel, 36A, 600V, 190mohm, 10V, 5V