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CY62137CV30LL-70BAXI vs IS62WV12816BLL-55BLI vs IS62WV12816BLL-55BLI-TR Comparison

  • Hide Shared Attributes
    CY62137CV30LL-70BAXI
    CY62137CV30LL-70BAXI
    IS62WV12816BLL-55BLI
    IS62WV12816BLL-55BLI
    IS62WV12816BLL-55BLI-TR
    IS62WV12816BLL-55BLI-TR
  • Part No.
    CY62137CV30LL-70BAXI
    IS62WV12816BLL-55BLI
    IS62WV12816BLL-55BLI-TR
  • Description
    SRAM Chip Async Single 3V 2M-Bit 128K x 16 70ns 48Pin FBGA
    2Mb, Low Power/Power Saver, Async, 128K x 16, 55ns, 2.5V 3.6V, 48 Ball mBGA (6x8 mm), RoHS
    2Mb, Low Power/Power Saver,Async,128K X 16,55ns,2.5V 3.6V,48 Ball MBGA (6x8 Mm), Leadfree
  • Manufacturer
    Cypress Semiconductor
    Integrated Silicon Solution(ISSI)
    Integrated Silicon Solution(ISSI)
  • Classification
    -
    RAM Memory
    Memory Chip
  • Reference Price(USD)
    -
    $0.705
    $0.934
  • Inventory(pcs)
    0
    652
    0
  • Case/Package
    -
    BGA-48
    BGA-48
  • Number of Pins
    -
    48
    48
  • Number of Bits
    -
    16
    16
  • Memory Size
    -
    2000000 B
    2000000 B
  • Number of Positions
    -
    48
    -
  • Access Time
    -
    55 ns
    55 ns
  • ECCN Code
    -
    EAR99
    EAR99
  • Supply Voltage (DC)
    -
    3.30 V, 3.60 V (max)
    3.30 V, 3.60 V (max)
  • Supply Current
    -
    3 mA
    3 mA
  • Operating Temperature
    -
    -40℃ ~ 85℃
    -40℃ ~ 85℃ (TA)
  • Mounting Style
    -
    Surface Mount
    Surface Mount
  • Packaging
    -
    Tray
    Tape & Reel (TR)
  • Lead-Free Status
    -
    Lead Free
  • RoHS
    -
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    -
    Active
    Active
  • Operating Temperature (Min)
    -
    -40 ℃
    -40 ℃
  • Supply Voltage
    -
    2.5V ~ 3.6V
    2.5V ~ 3.6V
  • Supply Voltage (Max)
    -
    3.6 V
    -
  • Access Time(Max)
    -
    55 ns
    55 ns
  • Supply Voltage (Min)
    -
    2.5 V
    -
  • Operating Temperature (Max)
    -
    85 ℃
    85 ℃
  • Overview
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    IS62WV12816BLL-55BLI Product overview

    DESCRIPTION TheISSIIS62WV12816ALL/ IS62WV12816BLL are high speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices. FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation    – 36 mW (typical) operating    – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply    – 1.65V--2.2V VDD (62WV12816ALL)    – 2.5V--3.6V VDD (62WV12816BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • 2CS Option Available • Lead-free available

    View all
    IS62WV12816BLL-55BLI-TR Product overview

    SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55ns 48-miniBGA (6x8)

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IS62WV12816BLL-55BLI Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IS62WV12816BLL-55BLI Mfr.Part#:IS62WV12816BLL-55BLI Compare: Current Part Manufacturers:Integrated Silicon Solution(ISSI) Category:RAM Memory Description:2Mb, Low Power/Power Saver, Async, 128K x 16, 55ns, 2.5V 3.6V, 48 Ball mBGA (6x8 mm), RoHS
Image:IS62WV12816BLL-55BI Mfr.Part#:IS62WV12816BLL-55BI Compare: IS62WV12816BLL-55BLI VS IS62WV12816BLL-55BI Manufacturers:Integrated Silicon Solution(ISSI) Category:Memory Chip Description:2Mb, Low Power/Power Saver,Async,128K X 16,55ns,2.5V 3.6V,48 Ball MBGA (6x8 Mm)
Image:CY62137EV30LL-45BVXI Mfr.Part#:CY62137EV30LL-45BVXI Compare: IS62WV12816BLL-55BLI VS CY62137EV30LL-45BVXI Manufacturers:Cypress Semiconductor Category:RAM Memory Description:CYPRESS SEMICONDUCTOR CY62137EV30LL-45BVXI SRAM, 2Mbit, 128K x 16Bit, 2.2V to 3.6V, FBGA, 48Pins, 45ns
Image:CY62137CV30LL-70BAXI Mfr.Part#:CY62137CV30LL-70BAXI Compare: IS62WV12816BLL-55BLI VS CY62137CV30LL-70BAXI Manufacturers:Cypress Semiconductor Category: Description:SRAM Chip Async Single 3V 2M-Bit 128K x 16 70ns 48Pin FBGA