DESCRIPTION TheISSIIS62WV12816ALL/ IS62WV12816BLL are high speed, 2M bit static RAMs organized as 128K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices. FEATURES • High-speed access time: 45ns, 55ns, 70ns • CMOS low power operation – 36 mW (typical) operating – 9 µW (typical) CMOS standby • TTL compatible interface levels • Single power supply – 1.65V--2.2V VDD (62WV12816ALL) – 2.5V--3.6V VDD (62WV12816BLL) • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • 2CS Option Available • Lead-free available
SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55ns 48-miniBGA (6x8)