SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 20ns 48-TSOP I
DESCRIPTION TheISSIIS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated usingISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices. FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) speed = 25ns for VDD 2.4V to 3.6V • Packages available: – 48-ball miniBGA (9mm x 11mm) – 48-pin TSOP (Type I) • Industrial and Automotive Temperature Support • Lead-free available • Data control for upper and lower bytes
SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 10ns 48-TSOP I