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IS61WV51216BLL-10TLI vs IS61WV51216BLL-10TLI-TR vs CY7C1051DV33-10ZSXI Comparison

  • Hide Shared Attributes
    IS61WV51216BLL-10TLI
    IS61WV51216BLL-10TLI
    IS61WV51216BLL-10TLI-TR
    IS61WV51216BLL-10TLI-TR
    CY7C1051DV33-10ZSXI
    CY7C1051DV33-10ZSXI
  • Part No.
    IS61WV51216BLL-10TLI
    IS61WV51216BLL-10TLI-TR
    CY7C1051DV33-10ZSXI
  • Description
    INTEGRATED SILICON SOLUTION (ISSI) IS61WV51216BLL-10TLI SRAM, 8Mbit, 512K x 16Bit, 2.4V to 3.6V, TSOP-II, 44Pins, 10ns
    8Mb,High-Speed,Async,512K X 16,8ns/3.3V,or 10ns/2.4V-3.6V,44Pin TSOP II, Leadfree
    CYPRESS SEMICONDUCTOR CY7C1051DV33-10ZSXI IC, SRAM, 8Mbit, 512K x 16Bit, 10ns Access Time, 3V to 3.6V supply, TSOP-II-44
  • Manufacturer
    Integrated Silicon Solution(ISSI)
    Integrated Silicon Solution(ISSI)
    Cypress Semiconductor
  • Classification
    RAM Memory
    RAM Memory
    RAM Memory
  • Reference Price(USD)
    $10.928
    $11.564
    $9.450
  • Inventory(pcs)
    9.7k
    0
    3.6k
  • Case/Package
    TSOP-44
    TSOP-44
    TSOP-44
  • Number of Pins
    44
    44
    44
  • Number of Bits
    16
    16
    16
  • Clock Speed
    -
    -
    10.0 GHz
  • Memory Size
    1000000 B
    -
    1000000 B
  • Number of Positions
    44
    -
    44
  • Access Time
    10 ns
    10 ns
    10 ns
  • Supply Voltage (DC)
    2.40V (min)
    -
    3.30 V, 3.60 V (max)
  • ECCN Code
    EAR99
    EAR99
    -
  • Supply Current
    -
    -
    110 mA
  • Operating Temperature
    -40℃ ~ 85℃
    -40℃ ~ 85℃ (TA)
    -40℃ ~ 85℃
  • Size-Length
    -
    -
    18.52 mm
  • Size-Width
    -
    -
    11.938 mm
  • Size-Height
    -
    -
    1.194 mm
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Each
    Tape & Reel (TR)
    Tray
  • REACH SVHC Compliance
    No SVHC
    -
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Supply Voltage (Min)
    2.4 V
    2.4 V
    3 V
  • Supply Voltage (Max)
    3.6 V
    3.6 V
    3.6 V
  • Automative-Spec
    Yes
    -
    -
  • Access Time(Max)
    10 ns
    10 ns
    10 ns
  • Industrial-Spec
    Yes
    -
    -
  • Operating Temperature (Max)
    85 ℃
    85 ℃
    85 ℃
  • Operating Temperature (Min)
    -40 ℃
    -40 ℃
    -40 ℃
  • REACH SVHC Compliance Edition
    2015/06/15
    -
    2015/12/17
  • Supply Voltage
    2.4V ~ 3.6V
    2.4V ~ 3.6V
    3V ~ 3.6V
  • Overview
    IS61WV51216BLL-10TLI Product overview

    The IS61WV51216BLL-10TLI is a 8Mb high-speed static RAM organized as 512K words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

    .
    High-performance, low-power CMOS process
    .
    Multiple centre power and ground pins for greater noise immunity
    .
    Easy memory expansion with CE and OE options
    .
    CE power-down
    .
    Fully static operation, no clock or refresh required
    .
    TTL compatible inputs and outputs
    .
    Data control for upper and lower bytes
    View all
    IS61WV51216BLL-10TLI-TR Product overview

    SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 44-TSOP II

    View all
    CY7C1051DV33-10ZSXI Product overview

    The CY7C1051DV33-10ZSXI is a 8Mb high performance CMOS Static RAM organized as 512K words by 16-bits. To write to the device, take chip enable and write enable inputs LOW. If byte LOW enable is LOW, then data from I/O pins, is written into the location specified on the address pins. If byte HIGH enable is LOW, then data from I/O pins is written into the location specified on the address pins. To read from the device, take chip enable and output enable LOW while forcing the write enable HIGH. If byte LOW enable is LOW, then data from the memory location specified by the address pins appears on I/O0-I/O7. If byte HIGH enable is LOW, then data from memory appears on I/O8 to I/O15. The input/output pins are placed in a high-impedance state when the device is deselected, the outputs are disabled, the BHE and BLE are disabled or a write operation is in progress.

    .
    Low CMOS standby power
    .
    Automatic power-down when deselected
    .
    TTL-compatible inputs and outputs
    .
    Easy memory expansion with CE and OE
    View all

IS61WV51216BLL-10TLI Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IS61WV51216BLL-10TLI Mfr.Part#:IS61WV51216BLL-10TLI Compare: Current Part Manufacturers:Integrated Silicon Solution(ISSI) Category:RAM Memory Description:INTEGRATED SILICON SOLUTION (ISSI) IS61WV51216BLL-10TLI SRAM, 8Mbit, 512K x 16Bit, 2.4V to 3.6V, TSOP-II, 44Pins, 10ns
Image:IS61WV51216BLL-10TLI-TR Mfr.Part#:IS61WV51216BLL-10TLI-TR Compare: IS61WV51216BLL-10TLI VS IS61WV51216BLL-10TLI-TR Manufacturers:Integrated Silicon Solution(ISSI) Category:RAM Memory Description:8Mb,High-Speed,Async,512K X 16,8ns/3.3V,or 10ns/2.4V-3.6V,44Pin TSOP II, Leadfree
Image:CY62157EV30LL-45ZSXI Mfr.Part#:CY62157EV30LL-45ZSXI Compare: IS61WV51216BLL-10TLI VS CY62157EV30LL-45ZSXI Manufacturers:Cypress Semiconductor Category:RAM Memory Description:CYPRESS SEMICONDUCTOR CY62157EV30LL-45ZSXI IC, SRAM, 8Mbit, 512K x 16Bit, 45ns Access Time, Parallel, 2.2V to 3.6V supply, TSOP-44
Image:CY62157EV30LL-45ZSXIT Mfr.Part#:CY62157EV30LL-45ZSXIT Compare: IS61WV51216BLL-10TLI VS CY62157EV30LL-45ZSXIT Manufacturers:Cypress Semiconductor Category:RAM Memory Description:CYPRESS SEMICONDUCTOR CY62157EV30LL-45ZSXIT IC, SRAM, 8Mbit, 512K x 16Bit, 45ns Access Time, 2.2V to 3.6V supply, TSOP-44