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IS61WV51216BLL-10MLI vs IS61WV51216BLL-10MLI-TR vs CY62157EV30LL-45BVXIT Comparison

  • Hide Shared Attributes
    IS61WV51216BLL-10MLI
    IS61WV51216BLL-10MLI
    IS61WV51216BLL-10MLI-TR
    IS61WV51216BLL-10MLI-TR
    CY62157EV30LL-45BVXIT
    CY62157EV30LL-45BVXIT
  • Part No.
    IS61WV51216BLL-10MLI
    IS61WV51216BLL-10MLI-TR
    CY62157EV30LL-45BVXIT
  • Description
    The ISSI IS61WV51216BLL is a high-speed, 8M-bit static RAMs organized as 512K words by 16Bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The device is packaged in the JEDEC standard 44Pin TSOP Type II and 48Pin Mini BGA (9mm x 11mm).
    SRAM Chip Async Single 2.5V/3.3V 8M-Bit 512K x 16 10ns 48Pin Mini-BGA T/R
    SRAM Chip Async Single 2.5V/3.3V 8M-Bit 512K x 16 45ns 48Pin VFBGA T/R
  • Manufacturer
    Integrated Silicon Solution(ISSI)
    Integrated Silicon Solution(ISSI)
    Cypress Semiconductor
  • Classification
    RAM Memory
    RAM Memory
    RAM Memory
  • Reference Price(USD)
    $5.773
    $7.170
    $4.563
  • Inventory(pcs)
    1.8k
    0
    2.3k
  • Case/Package
    BGA-48
    BGA-48
    VFBGA-48
  • Number of Pins
    48
    48
    48
  • Number of Bits
    16
    16
    16
  • Clock Speed
    -
    -
    45.0 GHz
  • Memory Size
    -
    -
    8000000 B
  • Number of Positions
    48
    -
    48
  • Access Time
    10 ns
    10 ns
    45 ns
  • Supply Voltage (DC)
    -
    -
    3.30 V, 3.60 V (max)
  • ECCN Code
    EAR99
    EAR99
    3A991.b.2.a
  • Supply Current
    -
    -
    25 mA
  • Operating Temperature
    -40℃ ~ 85℃ (TA)
    -40℃ ~ 85℃ (TA)
    -40℃ ~ 85℃
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Tray
    Tape & Reel (TR)
    Tape & Reel (TR)
  • Lead-Free Status
    PB free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Operating Temperature (Max)
    85 ℃
    85 ℃
    85 ℃
  • Access Time(Max)
    10 ns
    10 ns
    45 ns
  • Operating Temperature (Min)
    -40 ℃
    -40 ℃
    -40 ℃
  • Supply Voltage
    2.4V ~ 3.6V
    2.4V ~ 3.6V
    2.2V ~ 3.6V
  • Supply Voltage (Max)
    3.6 V
    -
    -
  • Supply Voltage (Min)
    2.4 V
    -
    -
  • Overview
    IS61WV51216BLL-10MLI Product overview

    SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 48-miniBGA (9x11)

    View all
    IS61WV51216BLL-10MLI-TR Product overview

    SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 10ns 48-miniBGA (9x11)

    View all
    CY62157EV30LL-45BVXIT Product overview

    SRAM - Asynchronous Memory IC 8Mb (512K x 16) Parallel 45ns 48-VFBGA (6x8)

    View all

IS61WV51216BLL-10MLI Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IS61WV51216BLL-10MLI Mfr.Part#:IS61WV51216BLL-10MLI Compare: Current Part Manufacturers:Integrated Silicon Solution(ISSI) Category:RAM Memory Description:The ISSI IS61WV51216BLL is a high-speed, 8M-bit static RAMs organized as 512K words by 16Bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. The device is packaged in the JEDEC standard 44Pin TSOP Type II and 48Pin Mini BGA (9mm x 11mm).
Image:IS61WV51216BLL-10MLI-TR Mfr.Part#:IS61WV51216BLL-10MLI-TR Compare: IS61WV51216BLL-10MLI VS IS61WV51216BLL-10MLI-TR Manufacturers:Integrated Silicon Solution(ISSI) Category:RAM Memory Description:SRAM Chip Async Single 2.5V/3.3V 8M-Bit 512K x 16 10ns 48Pin Mini-BGA T/R