DESCRIPTION The ISSI IS61LV25616AL is a high-speed, 4,194,304-bit static RAM organized as 262,144 words by 16 bits. It is fabricated using ISSI"s high-performance CMOS technol ogy. This highly reliable process coupled with innovative circuit design techniques, yields high-performance andlow power consumption devices. FEATURES • High-speed access time: — 10, 12 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial temperature available • Lead-free available
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 44-TSOP II