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IS61WV102416ALL-20TLI vs IS61WV102416BLL-10TLI vs IS62WV102416BLL-25TLI Comparison

  • Hide Shared Attributes
    IS61WV102416ALL-20TLI
    IS61WV102416ALL-20TLI
    IS61WV102416BLL-10TLI
    IS61WV102416BLL-10TLI
    IS62WV102416BLL-25TLI
    IS62WV102416BLL-25TLI
  • Part No.
    IS61WV102416ALL-20TLI
    IS61WV102416BLL-10TLI
    IS62WV102416BLL-25TLI
  • Description
    SRAM Chip Async Single 1.8V 16M-Bit 1M x 16 20ns 48Pin TSOP-I
    INTEGRATED SILICON SOLUTION (ISSI) IS61WV102416BLL-10TLI SRAM, 16Mbit, 1M x 16Bit, 2.4V to 3.6V, TSOP-I, 48Pins, 10ns
    16Mb, Low Power/Power Saver, Async, 1Mb x 16, 2.5V 3.6V, 48Pin TSOP I, RoHS
  • Manufacturer
    Integrated silicon soluN/Aon(issi)
    Integrated silicon soluN/Aon(issi)
    Integrated silicon soluN/Aon(issi)
  • Classification
    RAM Memory
    RAM Memory
    RAM Memory
  • Reference Price(USD)
    $12.351
    $8.088
    $16.026
  • Inventory(pcs)
    67
    5.2k
    4k
  • Case/Package
    TSOP-48
    TSOP-48
    TSOP-48
  • Number of Pins
    48
    48
    48
  • Number of Bits
    16
    16
    16
  • Memory Size
    -
    2000000 B
    -
  • Number of Positions
    -
    48
    -
  • Access Time
    20 ns
    10 ns
    25 ns
  • Operating Voltage
    -
    2.4V ~ 3.6V
    -
  • Supply Voltage (DC)
    -
    3.30 V, 3.60 V (max)
    -
  • ECCN Code
    EAR99
    EAR99
    EAR99
  • Operating Temperature
    -40℃ ~ 85℃ (TA)
    -40℃ ~ 85℃
    -40℃ ~ 85℃
  • Size-Length
    -
    18.6 mm
    -
  • Size-Width
    -
    12.2 mm
    -
  • Size-Height
    -
    1.05 mm
    -
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Tray
    Each
    Tray
  • REACH SVHC Compliance
    -
    No SVHC
    -
  • Lead-Free Status
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Supply Voltage (Min)
    -
    2.4 V
    2.4 V
  • Automative-Spec
    -
    Yes
    -
  • Access Time(Max)
    20 ns
    10 ns
    25 ns
  • Industrial-Spec
    -
    Yes
    -
  • Operating Temperature (Max)
    85 ℃
    85 ℃
    85 ℃
  • Operating Temperature (Min)
    -40 ℃
    -40 ℃
    -40 ℃
  • Supply Voltage
    1.65V ~ 2.2V
    2.4V ~ 3.6V
    1.65V ~ 3.6V
  • REACH SVHC Compliance Edition
    -
    2015/06/15
    -
  • Supply Voltage (Max)
    -
    3.6 V
    3.6 V
  • Overview
    IS61WV102416ALL-20TLI Product overview

    SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 20ns 48-TSOP I

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    IS61WV102416BLL-10TLI Product overview

    The IS61WV102416BLL-10TLI is a 16Mb high-speed static RAMs organized as 1024Kwords by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.

    .
    High-performance, low-power CMOS process
    .
    Multiple centre power and ground pins for greater noise immunity
    .
    Easy memory expansion with CE and OE options
    .
    CE power-down
    .
    Fully static operation, no clock or refresh required
    .
    TTL compatible inputs and outputs
    .
    Data control for upper and lower bytes
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    IS62WV102416BLL-25TLI Product overview

    DESCRIPTION TheISSIIS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated usingISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices. FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) speed = 25ns for VDD 2.4V to 3.6V • Packages available: – 48-ball miniBGA (9mm x 11mm) – 48-pin TSOP (Type I) • Industrial and Automotive Temperature Support • Lead-free available • Data control for upper and lower bytes

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IS61WV102416BLL-10TLI Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IS61WV102416BLL-10TLI Mfr.Part#:IS61WV102416BLL-10TLI Compare: Current Part Manufacturers:Integrated silicon soluN/Aon(issi) Category:RAM Memory Description:Integrated silicon soluN/Aon (issi) is61wv102416bll-10tli sram, 16mbit, 1m x 16bit, 2.4v to 3.6v, tsop-i, 48pins, 10ns
Image:IS61WV102416BLL-10TLI-TR Mfr.Part#:IS61WV102416BLL-10TLI-TR Compare: IS61WV102416BLL-10TLI VS IS61WV102416BLL-10TLI-TR Manufacturers:Integrated silicon soluN/Aon(issi) Category:RAM Memory Description:Sram chip async single 2.5v/3.3v 16m-bit 1m x 16 10ns 48pin tsop-i t/r
Image:IS62WV102416BLL-25TLI Mfr.Part#:IS62WV102416BLL-25TLI Compare: IS61WV102416BLL-10TLI VS IS62WV102416BLL-25TLI Manufacturers:Integrated silicon soluN/Aon(issi) Category:RAM Memory Description:16mb, low power/power saver, async, 1mb x 16, 2.5v 3.6v, 48pin tsop i, rohs
Image:IS61WV102416ALL-20TLI Mfr.Part#:IS61WV102416ALL-20TLI Compare: IS61WV102416BLL-10TLI VS IS61WV102416ALL-20TLI Manufacturers:Integrated silicon soluN/Aon(issi) Category:RAM Memory Description:Sram chip async single 1.8v 16m-bit 1m x 16 20ns 48pin tsop-i