SRAM - Asynchronous Memory IC 16Mb (1M x 16) Parallel 20ns 48-TSOP I
The IS61WV102416BLL-10TLI is a 16Mb high-speed static RAMs organized as 1024Kwords by 16 bits. It is fabricated using ISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access.
DESCRIPTION TheISSIIS62WV102416ALL/BLL and IS65WV102416BLL are high-speed, 16M-bit static RAMs organized as 1024K words by 16 bits. It is fabricated usingISSI"s high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high performance and low power consumption devices. FEATURES • High-speed access times: 25, 35 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CS1 and OE options • CS1 power-down • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single power supply VDD 1.65V to 2.2V (IS62WV102416ALL) speed = 35ns for VDD 1.65V to 2.2V VDD 2.4V to 3.6V (IS62/65WV102416BLL) speed = 25ns for VDD 2.4V to 3.6V • Packages available: – 48-ball miniBGA (9mm x 11mm) – 48-pin TSOP (Type I) • Industrial and Automotive Temperature Support • Lead-free available • Data control for upper and lower bytes