Home  IS42S16160G-7BLI  IS42S16160G-7BLI VS IS42S16160D-75EBLI

IS42S16160G-7BLI vs IS42S16160G-7BLI-TR vs IS42S16160D-75EBLI Comparison

  • Hide Shared Attributes
    IS42S16160G-7BLI
    IS42S16160G-7BLI
    IS42S16160G-7BLI-TR
    IS42S16160G-7BLI-TR
    IS42S16160D-75EBLI
    IS42S16160D-75EBLI
  • Part No.
    IS42S16160G-7BLI
    IS42S16160G-7BLI-TR
    IS42S16160D-75EBLI
  • Description
    Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8MM, 0.80 MMM, PITCH, ROHS COMPLIANT, TFBGA-54
    Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, 8 X 8MM, 0.8MM, PITCH, ROHS COMPLIANT, TFBGA-54
    256M, 3.3V, SDRAM, 16Mx16, 133MHz @ CL2, 54 Ball BGA (8mmx13mm) RoHS, IT
  • Manufacturer
    Integrated silicon soluN/Aon(issi)
    Integrated silicon soluN/Aon(issi)
    Integrated silicon soluN/Aon(issi)
  • Classification
    RAM Memory
    Memory Chip
    Memory Chip
  • Reference Price(USD)
    $2.672
    $2.933
    -
  • Inventory(pcs)
    19.4k
    3.8k
    0
  • Case/Package
    BGA-54
    TFBGA-54
    BGA-54
  • Number of Pins
    54
    54
    54
  • Number of Bits
    16
    16
    16
  • Clock Speed
    143 MHz
    143 MHz
    -
  • Number of Positions
    54
    -
    -
  • Access Time
    7 ns
    5.4 ns
    7.5 ns
  • ECCN Code
    EAR99
    EAR99
    -
  • Supply Current
    130 mA
    130 mA
    -
  • Operating Temperature
    -40℃ ~ 85℃
    -40℃ ~ 85℃ (TA)
    -40℃ ~ 85℃ (TA)
  • Size-Length
    -
    -
    13 mm
  • Size-Width
    -
    -
    8 mm
  • Size-Height
    -
    -
    0.8 mm
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Tray
    Tape & Reel (TR)
    Tray
  • REACH SVHC Compliance
    No SVHC
    -
    -
  • Lead-Free Status
    PB free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Obsolete
  • Operating Temperature (Max)
    85 ℃
    85 ℃
    85 ℃
  • Operating Temperature (Min)
    -40 ℃
    -40 ℃
    -40 ℃
  • REACH SVHC Compliance Edition
    2015/06/15
    -
    -
  • Supply Voltage
    3V ~ 3.6V
    3V ~ 3.6V
    3V ~ 3.6V
  • Access Time(Max)
    5.4 ns
    5.4 ns
    5.5 ns
  • Supply Voltage (Max)
    3.6 V
    -
    -
  • Supply Voltage (Min)
    3 V
    -
    -
  • Industrial-Spec
    Yes
    -
    -
  • Overview
    IS42S16160G-7BLI Product overview

    The IS42S16160G-7BLI is a 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 256Mb SDRAM is organized as 4M x16x4 banks, 54-pin TSOPII and 54-ball BGA. The 256Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V Vdd and 3.3V Vddq memory systems containing 268,435,456 bits. Internally configured as a quad-bank DRAM with a synchronous interface. Each 67,108,864-bit bank is organized as 8,192 rows by 512 columns by 16 bits or 8,192 rows by 1,024 columns by 8 bits. The 256Mb SDRAM includes an AUTO REFRESH MODE and a power-saving, power-down mode. All signals are registered on the positive edge of the clock signal, CLK. All inputs and outputs are LVTTL compatible.

    .
    143MHz Clock frequency
    .
    7ns Speed
    .
    Fully synchronous, all signals referenced to a positive clock edge
    .
    Internal bank for hiding row access/precharge
    .
    3.3 ±0.3V Single power supply
    .
    LVTTL interface
    .
    Programmable burst length - 1, 2, 4, 8, full page
    .
    Sequential/Interleave programmable burst sequence
    .
    Auto refresh (CBR)
    .
    Self refresh
    .
    8K Refresh cycles every 16ms (A2 grade) or 64ms (commercial, industrial, A1 grade)
    .
    Random column address every clock cycle
    .
    Programmable CAS latency - 2, 3 clocks
    .
    Burst read/write and burst read/single write operations capability
    .
    Burst termination by burst stop and precharge command
    View all
    IS42S16160G-7BLI-TR Product overview

    SDRAM Memory IC 256Mb (16M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8)

    View all
    IS42S16160D-75EBLI Product overview

    SDRAM Memory IC 256Mb (16M x 16) Parallel 133MHz 5.5ns 54-TFBGA (8x13)

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IS42S16160G-7BLI Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IS42S16160G-7BLI Mfr.Part#:IS42S16160G-7BLI Compare: Current Part Manufacturers:Integrated silicon soluN/Aon(issi) Category:RAM Memory Description:Synchronous dram, 16mx16, 5.4ns, cmos, pbga54, 8 x 8mm, 0.80 mmm, pitch, rohs compliant, tfbga-54
Image:IS42S16160D-7BLI Mfr.Part#:IS42S16160D-7BLI Compare: IS42S16160G-7BLI VS IS42S16160D-7BLI Manufacturers:Integrated silicon soluN/Aon(issi) Category:RAM Memory Description:Synchronous dram, 16mx16, 5.4ns, cmos, pbga54, 13 x 8mm, 0.8mm pitch, rohs compliant, ms-207, tfbga-54
Image:IS42S16160D-75EBLI Mfr.Part#:IS42S16160D-75EBLI Compare: IS42S16160G-7BLI VS IS42S16160D-75EBLI Manufacturers:Integrated silicon soluN/Aon(issi) Category:Memory Chip Description:256m, 3.3v, sdram, 16mx16, 133mhz @ cl2, 54 ball bga (8mmx13mm) rohs, it
Image:IS42S16160G-7BLI-TR Mfr.Part#:IS42S16160G-7BLI-TR Compare: IS42S16160G-7BLI VS IS42S16160G-7BLI-TR Manufacturers:Integrated silicon soluN/Aon(issi) Category:Memory Chip Description:Synchronous dram, 16mx16, 5.4ns, cmos, pbga54, 8 x 8mm, 0.8mm, pitch, rohs compliant, tfbga-54