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IRLR024NPBF vs STD12NF06LT4 vs IRLR024NTRPBF Comparison

  • Hide Shared Attributes
    IRLR024NPBF
    IRLR024NPBF
    STD12NF06LT4
    STD12NF06LT4
    IRLR024NTRPBF
    IRLR024NTRPBF
  • Part No.
    IRLR024NPBF
    STD12NF06LT4
    IRLR024NTRPBF
  • Description
    MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
    DPAK N-CH 60V 12A
    DPAK N-CH 55V 17A
  • Manufacturer
    International Rectifier
    ST Microelectronics
    Infineon
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.465
    $0.233
    $0.161
  • Inventory(pcs)
    0
    2.5k
    335.9k
  • Case/Package
    TO-252-3
    TO-252-3
    TO-252-3
  • Number of Pins
    3
    3
    3
  • Number of Channels
    1
    -
    1
  • Power Rating
    -
    -
    38 W
  • Power Dissipation
    45 W
    30 W
    45 W
  • Number of Positions
    3
    3
    3
  • Rise Time
    74.0 ns
    35 ns
    74 ns
  • Input Capacitance
    480pF @25V
    350 pF
    480 pF
  • Voltage Rating (DC)
    55.0 V
    60.0 V
    -
  • Drain to Source Resistance (on) (Rds)
    0.065 Ω
    0.08 Ω
    0.065 Ω
  • Polarity
    N-Channel
    N-Channel
    N-CH
  • Threshold Voltage
    2 V
    3 V
    2 V
  • Drain to Source Voltage (Vds)
    55 V
    60 V
    55 V
  • ECCN Code
    -
    EAR99
    -
  • Current Rating
    17.0 A
    12.0 A
    -
  • Breakdown Voltage (Drain to Source)
    55 V
    60.0 V
    55 V
  • Breakdown Voltage (Gate to Source)
    -
    ±16.0 V
    -
  • Continuous Drain Current (Ids)
    17.0 A
    12.0 A
    17A
  • Operating Temperature
    -55℃ ~ 175℃
    -55℃ ~ 175℃ (TJ)
    -55℃ ~ 175℃ (TJ)
  • Part Family
    IRLR024N
    -
    -
  • Size-Length
    6.73 mm
    6.6 mm
    6.73 mm
  • Size-Width
    6.22 mm
    6.2 mm
    6.22 mm
  • Size-Height
    2.39 mm
    2.4 mm
    2.39 mm
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Tube
    Tape & Reel (TR)
    Tape & Reel (TR)
  • REACH SVHC Compliance
    No SVHC
    No SVHC
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Fall Time
    -
    13 ns
    29 ns
  • Input Capacitance (Ciss)
    480pF @25V(Vds)
    350pF @25V(Vds)
    480pF @25V(Vds)
  • Automative-Spec
    -
    Yes
    -
  • Operating Temperature (Max)
    175 ℃
    175 ℃
    175 ℃
  • Input Power (Max)
    45 W
    30 W
    45 W
  • Industrial-Spec
    -
    Yes
    -
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Power Dissipation (Max)
    -
    42.8W (Tc)
    45W (Tc)
  • REACH SVHC Compliance Edition
    2014/12/17
    2015/12/17
    2015/12/17
  • Transistor Gender
    N Channel
    N Channel
    N Channel
  • Overview
    IRLR024NPBF Product overview

    **N-Channel Power MOSFET 13A to 19A, Infineon** Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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    STD12NF06LT4 Product overview

    The STD12NF06LT4 is a STripFET™ II N-channel Power MOSFET specifically designed to minimize input capacitance and gate charge. The device suitable for use as primary switch in advanced high-efficiency isolated DC-to-DC converters. It is used in telecom and computer applications and applications with low gate charge driving requirements.

    .
    AEC-Q101 qualified
    .
    Exceptional dV/dt capability
    .
    Low gate charge
    .
    -55 to 175°C Operating junction temperature
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    IRLR024NTRPBF Product overview

    The IRLR024NTRPBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.

    .
    Logic level gate drive
    .
    Advanced process technology
    .
    Fully avalanche rating
    .
    Dynamic dV/dt rating
    View all

IRLR024NPBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRLR024NPBF Mfr.Part#:IRLR024NPBF Compare: Current Part Manufacturers:International Rectifier Category:MOSFETs Description:MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
Image:IRLR024NTRPBF Mfr.Part#:IRLR024NTRPBF Compare: IRLR024NPBF VS IRLR024NTRPBF Manufacturers:International Rectifier Category:MOSFETs Description:MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ω; ID 17A; D-Pak (TO-252AA); PD 45W
Image:NTD3055L104T4G Mfr.Part#:NTD3055L104T4G Compare: IRLR024NPBF VS NTD3055L104T4G Manufacturers:ON Semiconductor Category:MOSFETs Description:Power MOSFET 60V 12A 104mOhm Single N-Channel DPAK Logic Level, DPAK (SINGLE GAUGE) TO-252, 2500-REEL
Image:STD12NF06LT4 Mfr.Part#:STD12NF06LT4 Compare: IRLR024NPBF VS STD12NF06LT4 Manufacturers:ST Microelectronics Category:MOSFETs Description:DPAK N-CH 60V 12A