The IRGP4063DPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. It features rugged transient performance for increased reliability and excellent current sharing in parallel operation. It is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.
The NGTB45N60S2WG IGBT transistor from ON Semiconductor is the best electronic switch for fast switching. Its maximum power dissipation is 300000 mW. It has a maximum collector emitter voltage of 600 V. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. It is made in a single configuration.
The FGH40N60SFTU is a 600V Field Stop IGBT with high current capability. This new IGBT is suitable for soft switching applications such as induction cookers and inverterized microwave ovens. FS IGBT provides lower VCE (sat) during on-state and lower switching losses during the turn-off instant. However, since it doesn"t include an intrinsic body diode in common with all other types of IGBTs, it is generally packaged together with an additional Fast Recovery Diode (FRD) for most switching applications. This product is general usage and suitable for many different applications.