We are Apogeeweb Semiconductor Electronic

WELCOME TO OUR BLOG

Home  IRFZ44VZPBF  IRFZ44VZPBF VS STP60NF06L

IRFZ44VZPBF vs STP65NF06 vs IRF1018EPBF Comparison

  • Hide Shared Attributes
    IRFZ44VZPBF
    IRFZ44VZPBF
    STP65NF06
    STP65NF06
    IRF1018EPBF
    IRF1018EPBF
  • Part No.
    IRFZ44VZPBF
    STP65NF06
    IRF1018EPBF
  • Description
    MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 9.6Milliohms; ID 57A; TO-220AB; PD 92W; gFS 25S
    N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET
    TO-220AB N-CH 60V 79A
  • Manufacturer
    International Rectifier
    ST Microelectronics
    Infineon
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.819
    $0.201
    $0.334
  • Inventory(pcs)
    0
    2.1k
    3.8k
  • Case/Package
    TO-220-3
    TO-220-3
    TO-220-3
  • Number of Pins
    3
    3
    3
  • Number of Channels
    -
    1
    1
  • Power Rating
    -
    -
    110 W
  • Power Dissipation
    92 W
    110 W
    110 W
  • Number of Positions
    3
    3
    3
  • Input Capacitance
    1690pF @25V
    1.70 nF
    -
  • Rise Time
    62.0 ns
    60 ns
    35 ns
  • Voltage Rating (DC)
    60.0 V
    60.0 V
    -
  • Drain to Source Resistance (on) (Rds)
    12 mΩ
    0.0115 Ω
    0.0071 Ω
  • Polarity
    N-Channel
    N-Channel
    N-Channel
  • Threshold Voltage
    4 V
    4 V
    4 V
  • Drain to Source Voltage (Vds)
    60 V
    60 V
    60 V
  • ECCN Code
    -
    -
    EAR99
  • Current Rating
    57.0 A
    60.0 A
    -
  • Breakdown Voltage (Drain to Source)
    60 V
    60 V
    60 V
  • Continuous Drain Current (Ids)
    57.0 A
    30.0 A
    79A
  • Operating Temperature
    -55℃ ~ 175℃
    -55℃ ~ 175℃ (TJ)
    -55℃ ~ 175℃ (TJ)
  • Gate Charge
    65.0 nC
    75.0 nC
    -
  • Part Family
    IRFZ44VZ
    -
    -
  • Size-Length
    10.66 mm
    10.4 mm
    10.67 mm
  • Size-Width
    -
    4.6 mm
    4.83 mm
  • Size-Height
    16.51 mm
    15.75 mm
    9.02 mm
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Rail, Tube
    Tube
    Tube
  • REACH SVHC Compliance
    -
    No SVHC
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Input Power (Max)
    92 W
    110 W
    110 W
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Fall Time
    -
    16 ns
    46 ns
  • Operating Temperature (Max)
    175 ℃
    175 ℃
    175 ℃
  • Power Dissipation (Max)
    -
    110W (Tc)
    110W (Tc)
  • REACH SVHC Compliance Edition
    2015/12/17
    -
    2015/12/17
  • Transistor Gender
    N Channel
    N Channel
    N Channel
  • Input Capacitance (Ciss)
    1690pF @25V(Vds)
    1700pF @25V(Vds)
    2290pF @50V(Vds)
  • Industrial-Spec
    -
    Yes
    -
  • Overview
    IRFZ44VZPBF Product overview

    Power MOSFET, Pulsed Drain Current 230 A, Input Capacitance 1690 pF

    .
    Advanced process technology
    .
    Ultra low on-resistance
    .
    175 °C operating temperature
    .
    Fast switching
    .
    Repetitive avalanche allowed up to Tjmax
    .
    Lead-free
    Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature
    View all
    STP65NF06 Product overview

    The STP65NF06 is a 60V N-channel STripFET™ II Power MOSFET developed using unique "single feature size"™ strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.

    .
    Standard level gate drive
    .
    100% Avalanche tested
    View all
    IRF1018EPBF Product overview

    The IRF1018EPBF is a 60V single N-channel HEXFET® Power MOSFET with high speed power switching and enhanced body diode dV/dt and dI/dt capability.

    .
    High efficiency synchronous rectification in SMPS
    .
    High frequency hard switching converter
    .
    Improved gate, avalanche and dynamic dv/dt ruggedness
    .
    Fully characterized capacitance and avalanche SOA
    View all

IRFZ44VZPBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRFZ44VZPBF Mfr.Part#:IRFZ44VZPBF Compare: Current Part Manufacturers:International Rectifier Category:MOSFETs Description:MOSFET, Power; N-Ch; VDSS 60V; RDS(ON) 9.6Milliohms; ID 57A; TO-220AB; PD 92W; gFS 25S
Image:STP60NF06L Mfr.Part#:STP60NF06L Compare: IRFZ44VZPBF VS STP60NF06L Manufacturers:ST Microelectronics Category:MOSFETs Description:Trans MOSFET N-CH 60V 60A 3Pin(3+Tab) TO-220 Tube
Image:STP65NF06 Mfr.Part#:STP65NF06 Compare: IRFZ44VZPBF VS STP65NF06 Manufacturers:ST Microelectronics Category:MOSFETs Description:N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET
Image:IRF1018EPBF Mfr.Part#:IRF1018EPBF Compare: IRFZ44VZPBF VS IRF1018EPBF Manufacturers:Infineon Category:MOSFETs Description:TO-220AB N-CH 60V 79A