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IRFZ34NS vs STB36NF06LT4 Comparison

  • Hide Shared Attributes
    IRFZ34NS
    IRFZ34NS
    STB36NF06LT4
    STB36NF06LT4
  • Part No.
    IRFZ34NS
    STB36NF06LT4
  • Description
    Trans MOSFET N-CH 55V 29A 3Pin (2+Tab) D2PAK
    D2PAK N-CH 60V 30A
  • Manufacturer
    International Rectifier
    ST Microelectronics
  • Classification
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    -
    $0.553
  • Inventory(pcs)
    0
    0
  • Case/Package
    TO-263
    TO-263-3
  • Number of Pins
    -
    3
  • Number of Channels
    -
    1
  • Power Dissipation
    68.0 W
    70 W
  • Number of Positions
    -
    3
  • Rise Time
    49.0 ns
    80 ns
  • Input Capacitance
    -
    660 pF
  • Voltage Rating (DC)
    55.0 V
    60.0 V
  • Drain to Source Resistance (on) (Rds)
    40.0 mΩ (max)
    0.032 Ω
  • Polarity
    N-Channel
    N-Channel
  • Threshold Voltage
    -
    1 V
  • Drain to Source Voltage (Vds)
    55.0 V
    60 V
  • Current Rating
    29.0 A
    30.0 A
  • Breakdown Voltage (Drain to Source)
    55.0V (min)
    60 V
  • Continuous Drain Current (Ids)
    29.0 A
    30.0 A
  • Operating Temperature
    -
    -55℃ ~ 175℃ (TJ)
  • Gate Charge
    -
    17.5 nC
  • Part Family
    IRFZ34NS
    -
  • Size-Length
    -
    10.4 mm
  • Size-Width
    -
    9.35 mm
  • Size-Height
    -
    4.6 mm
  • Mounting Style
    Surface Mount
    Surface Mount
  • Packaging
    Bulk
    Tape & Reel (TR)
  • REACH SVHC Compliance
    -
    No SVHC
  • Lead-Free Status
    Contains Lead
    Lead Free
  • RoHS
    Non-Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Not Recommended for New Designs
  • Transistor Gender
    -
    N Channel
  • Input Capacitance (Ciss)
    -
    660pF @25V(Vds)
  • Input Power (Max)
    -
    70 W
  • Fall Time
    -
    13 ns
  • Operating Temperature (Max)
    -
    175 ℃
  • Operating Temperature (Min)
    -
    -55 ℃
  • Power Dissipation (Max)
    -
    70W (Tc)
  • REACH SVHC Compliance Edition
    -
    2015/12/17
  • Overview
    IRFZ34NS Product overview

    Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. l Advanced Process Technology l Surface Mount (IRFZ34NS) l Low-profile through-hole (IRFZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated

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    STB36NF06LT4 Product overview

    N-Channel 60V 30A (Tc) 70W (Tc) Surface Mount D2PAK

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IRFZ34NS Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRFZ34NS Mfr.Part#:IRFZ34NS Compare: Current Part Manufacturers:International Rectifier Category:MOSFETs Description:Trans MOSFET N-CH 55V 29A 3Pin (2+Tab) D2PAK
Image:STB36NF06LT4 Mfr.Part#:STB36NF06LT4 Compare: IRFZ34NS VS STB36NF06LT4 Manufacturers:ST Microelectronics Category:MOSFETs Description:D2PAK N-CH 60V 30A