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FDB024N06 vs IRFS7530PBF vs PSMN004-60B,118 Comparison

  • Hide Shared Attributes
    FDB024N06
    FDB024N06
    IRFS7530PBF
    IRFS7530PBF
    PSMN004-60B,118
    PSMN004-60B,118
  • Part No.
    FDB024N06
    IRFS7530PBF
    PSMN004-60B,118
  • Description
    MOSFET Transistor, N Channel, 120A, 60V, 0.0018Ω, 10V, 3.5V
    D2PAK N-CH 60V 295A
    D2PAK N-CH 60V 75A
  • Manufacturer
    Fairchild
    Infineon
    NXP
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $2.821
    $2.774
    $2.220
  • Inventory(pcs)
    0
    0
    0
  • Case/Package
    TO-263-3
    TO-263-3
    TO-263-3
  • Number of Pins
    3
    3
    3
  • Power Dissipation
    395 W
    375 W
    230 W
  • Number of Positions
    3
    3
    -
  • Drain to Source Resistance (on) (Rds)
    0.0018 Ω
    0.00165 Ω
    0.0031 Ω
  • Polarity
    N-Channel
    N-Channel
    N-Channel
  • Drain to Source Voltage (Vds)
    60 V
    60 V
    60 V
  • ECCN Code
    -
    EAR99
    -
  • Threshold Voltage
    3.5 V
    3.7 V
    3 V
  • Continuous Drain Current (Ids)
    265A
    295A
    75.0 A
  • Operating Temperature
    -55℃ ~ 175℃ (TJ)
    -55℃ ~ 175℃ (TJ)
    -55℃ ~ 175℃ (TJ)
  • Size-Length
    10.67 mm
    10.54 mm
    -
  • Size-Width
    9.65 mm
    4.69 mm
    -
  • Size-Height
    4.83 mm
    9.65 mm
    4.5 mm
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Tape & Reel (TR)
    Tube
    Tape & Reel (TR)
  • REACH SVHC Compliance
    No SVHC
    -
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Not Recommended for New Designs
    Active
  • Transistor Gender
    N Channel
    N Channel
    -
  • Input Capacitance (Ciss)
    14885pF @25V(Vds)
    13703pF @25V(Vds)
    8300pF @25V(Vds)
  • Input Power (Max)
    395 W
    -
    230 W
  • Operating Temperature (Max)
    175 ℃
    175 ℃
    175 ℃
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Power Dissipation (Max)
    395W (Tc)
    375W (Tc)
    230W (Tc)
  • REACH SVHC Compliance Edition
    2015/06/15
    2015/12/17
    2015/12/17
  • Overview
    FDB024N06 Product overview

    The FDB024N06 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and renewable system.

    .
    Fast switching speed
    .
    Low gate charge
    .
    High performance Trench technology for extremely low RDS (ON)
    .
    High power and current handling capability
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    IRFS7530PBF Product overview

    The IRFS7530PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for battery powered circuits, synchronous rectifier applications, O-ring and redundant power switches, half-bridge and full-bridge topologies.

    .
    Fully characterized capacitance and avalanche SOA
    .
    Enhanced body diode dV/dt and di/dt capability
    View all
    View all

IRFS7530PBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRFS7530PBF Mfr.Part#:IRFS7530PBF Compare: Current Part Manufacturers:Infineon Category:MOSFETs Description:D2PAK N-CH 60V 295A
Image:IRFS7530TRLPBF Mfr.Part#:IRFS7530TRLPBF Compare: IRFS7530PBF VS IRFS7530TRLPBF Manufacturers:Infineon Category:MOSFETs Description:D2PAK N-CH 60V 295A
Image:FDB024N06 Mfr.Part#:FDB024N06 Compare: IRFS7530PBF VS FDB024N06 Manufacturers:Fairchild Category:MOSFETs Description:MOSFET Transistor, N Channel, 120A, 60V, 0.0018Ω, 10V, 3.5V
Image:NVB5860NLT4G Mfr.Part#:NVB5860NLT4G Compare: IRFS7530PBF VS NVB5860NLT4G Manufacturers:ON Semiconductor Category:MOSFETs Description:D2PAK N-CH 60V 220A