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IRFP260NPBF vs STW75NF20 vs STW52NK25Z Comparison

  • Hide Shared Attributes
    IRFP260NPBF
    IRFP260NPBF
    STW75NF20
    STW75NF20
    STW52NK25Z
    STW52NK25Z
  • Part No.
    IRFP260NPBF
    STW75NF20
    STW52NK25Z
  • Description
    MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ω; ID 50A; TO-247AC; PD 300W; VGS +/-20V
    TO-247 N-CH 200V 75A
    N-channel 250V, 0.033Ω typ., 52A, Zener protected SuperMESH Power MOSFET in TO-247 package
  • Manufacturer
    International Rectifier
    ST Microelectronics
    ST Microelectronics
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $1.610
    $1.334
    $1.859
  • Inventory(pcs)
    0
    2
    4.3k
  • Case/Package
    TO-247-3
    TO-247-3
    TO-247-3
  • Number of Pins
    3
    3
    3
  • Number of Channels
    -
    1
    -
  • Power Dissipation
    300 W
    190 W
    300 W
  • Number of Positions
    3
    3
    3
  • Input Capacitance
    4057pF @25V
    -
    -
  • Rise Time
    60.0 ns
    33 ns
    75 ns
  • Thermal Resistance
    0.5℃/W (RθJC)
    -
    -
  • Voltage Rating (DC)
    200 V
    -
    250 V
  • Drain to Source Resistance (on) (Rds)
    0.04 Ω
    0.028 Ω
    0.033 Ω
  • Polarity
    N-Channel
    N-Channel
    N-Channel
  • Threshold Voltage
    4 V
    3 V
    3.75 V
  • HK STC License
    NLR
    -
    -
  • Drain to Source Voltage (Vds)
    200 V
    200 V
    250 V
  • Current Rating
    50.0 A
    -
    52.0 A
  • Breakdown Voltage (Drain to Source)
    200 V
    200 V
    250 V
  • Breakdown Voltage (Gate to Source)
    ±20.0 V
    -
    ±30.0 V
  • Continuous Drain Current (Ids)
    50.0 A
    47.0 A, 75.0 A
    26.0 A
  • Operating Temperature
    -55℃ ~ 175℃
    -50℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
  • Part Family
    IRFP260N
    -
    -
  • Size-Length
    15.9 mm
    15.75 mm
    15.75 mm
  • Size-Width
    -
    5.15 mm
    5.15 mm
  • Size-Height
    20.3 mm
    20.15 mm
    20.15 mm
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
    Tube
  • REACH SVHC Compliance
    No SVHC
    No SVHC
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Input Capacitance (Ciss)
    4057pF @25V(Vds)
    3260pF @25V(Vds)
    4850pF @25V(Vds)
  • Industrial-Spec
    -
    Yes
    Yes
  • Input Power (Max)
    300 W
    190 W
    300 W
  • Fall Time
    -
    29 ns
    55 ns
  • Operating Temperature (Max)
    175 ℃
    150 ℃
    150 ℃
  • Operating Temperature (Min)
    -55 ℃
    -50 ℃
    -55 ℃
  • Power Dissipation (Max)
    -
    190W (Tc)
    300000 mW
  • REACH SVHC Compliance Edition
    2014/12/17
    2015/12/17
    2015/12/17
  • Transistor Gender
    N Channel
    N Channel
    N Channel
  • Overview
    IRFP260NPBF Product overview

    **N-Channel Power MOSFET 50A to 59A, Infineon** Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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    STW75NF20 Product overview

    The STW75NF20 is a STripFET™ II N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has been specifically designed to minimize input capacitance and gate charge. It is suitable as primary switch in advanced high-efficiency isolated DC-to-DC converters.

    .
    Exceptional dV/dt capability
    .
    Low gate charge
    .
    100% Avalanche tested
    .
    -55 to 150°C Operating junction temperature
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    STW52NK25Z Product overview

    The STW52NK25Z is a 250V N-channel Zener-protected Power MOSFET developed using SuperMESH™ technology, achieved through optimization of well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Improved gate charge and lower power dissipation to meet today"s challenging efficiency requirements.

    .
    Extremely high dv/dt capability
    .
    100% Avalanche tested
    .
    Gate charge minimized
    .
    Very low intrinsic capacitance
    .
    Very good manufacturing repeatability
    ESD sensitive device, take proper precaution while handling the device.
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IRFP260NPBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRFP260NPBF Mfr.Part#:IRFP260NPBF Compare: Current Part Manufacturers:International Rectifier Category:MOSFETs Description:MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ω; ID 50A; TO-247AC; PD 300W; VGS +/-20V
Image:STW75NF20 Mfr.Part#:STW75NF20 Compare: IRFP260NPBF VS STW75NF20 Manufacturers:ST Microelectronics Category:MOSFETs Description:TO-247 N-CH 200V 75A
Image:STW40NF20 Mfr.Part#:STW40NF20 Compare: IRFP260NPBF VS STW40NF20 Manufacturers:ST Microelectronics Category:MOSFETs Description:TO-247 N-CH 200V 40A
Image:STW52NK25Z Mfr.Part#:STW52NK25Z Compare: IRFP260NPBF VS STW52NK25Z Manufacturers:ST Microelectronics Category:MOSFETs Description:N-channel 250V, 0.033Ω typ., 52A, Zener protected SuperMESH Power MOSFET in TO-247 package