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IRFL4310PBF vs STN2NF10 vs IRFL4310TRPBF Comparison

  • Hide Shared Attributes
    IRFL4310PBF
    IRFL4310PBF
    STN2NF10
    STN2NF10
    IRFL4310TRPBF
    IRFL4310TRPBF
  • Part No.
    IRFL4310PBF
    STN2NF10
    IRFL4310TRPBF
  • Description
    MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ω; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55
    SOT-223 N-CH 100V 2.4A
    SOT-223 N-CH 100V 2.2A
  • Manufacturer
    International Rectifier
    ST Microelectronics
    Infineon
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.286
    $0.109
    $0.239
  • Inventory(pcs)
    0
    987.3k
    3.2k
  • Case/Package
    TO-261-4
    TO-261-4
    TO-261-4
  • Number of Pins
    3
    4
    4
  • Number of Channels
    -
    1
    -
  • Power Rating
    -
    -
    2.1 W
  • Power Dissipation
    2.1 W
    3.3 W
    2.1 W
  • Number of Positions
    3
    4
    4
  • Input Capacitance
    330pF @25V
    -
    -
  • Rise Time
    18.0 ns
    10 ns
    18 ns
  • Voltage Rating (DC)
    100 V
    100 V
    -
  • Drain to Source Resistance (on) (Rds)
    0.2 Ω
    0.23 Ω
    0.2 Ω
  • Polarity
    N-Channel
    N-Channel
    N-CH
  • ECCN Code
    -
    EAR99
    -
  • Threshold Voltage
    4 V
    4 V
    4 V
  • Drain to Source Voltage (Vds)
    100 V
    100 V
    100 V
  • Current Rating
    1.60 A
    2.00 A
    -
  • Breakdown Voltage (Drain to Source)
    100 V
    100 V
    -
  • Breakdown Voltage (Gate to Source)
    -
    ±20.0 V
    -
  • Continuous Drain Current (Ids)
    1.60 A
    2.00 A
    2.2A
  • Material
    -
    -
    Silicon
  • Operating Temperature
    -55℃ ~ 150℃
    -55℃ ~ 150℃
    -55℃ ~ 150℃ (TJ)
  • Part Family
    IRFL4310
    -
    -
  • Size-Length
    6.7 mm
    6.5 mm
    -
  • Size-Width
    -
    3.5 mm
    -
  • Size-Height
    1.45 mm
    1.8 mm
    -
  • Mounting Style
    Surface Mount
    Surface Mount
    Surface Mount
  • Packaging
    Tube
    Tape & Reel (TR)
    Tape & Reel (TR)
  • REACH SVHC Compliance
    No SVHC
    No SVHC
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Input Power (Max)
    1 W
    3.3 W
    1 W
  • Fall Time
    -
    3 ns
    20 ns
  • Transistor Gender
    N Channel
    N Channel
    N Channel
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    150 ℃
  • Input Capacitance (Ciss)
    330pF @25V(Vds)
    280pF @25V(Vds)
    330pF @25V(Vds)
  • Industrial-Spec
    -
    Yes
    -
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Power Dissipation (Max)
    -
    3.3W (Tc)
    1W (Ta)
  • REACH SVHC Compliance Edition
    -
    2014/06/16
    2015/12/17
  • Automative-Spec
    -
    -
    Yes
  • Overview
    IRFL4310PBF Product overview

    **HEXFET® N-Channel Power MOSFET up to 50A, Infineon** HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

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    STN2NF10 Product overview

    The STN2NF10 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

    .
    -55 to 150°C Operating junction temperature range
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    IRFL4310TRPBF Product overview

    The IRFL4310TRPBF is a HEXFET® fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of 1W is possible in a typical surface-mount application.

    .
    Dynamic dV/dt rating
    .
    Ease of paralleling
    .
    Advanced process technology
    .
    Low static drain-to-source ON-resistance
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IRFL4310PBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRFL4310PBF Mfr.Part#:IRFL4310PBF Compare: Current Part Manufacturers:International Rectifier Category:MOSFETs Description:MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.2Ω; ID 1.6A; SOT-223; PD 1W; VGS +/-20V; -55
Image:IRFL4310TRPBF Mfr.Part#:IRFL4310TRPBF Compare: IRFL4310PBF VS IRFL4310TRPBF Manufacturers:International Rectifier Category:MOSFETs Description:Trans MOSFET N-CH 100V 2.2A 4Pin(3+Tab) SOT-223 T/R
Image:STN2NF10 Mfr.Part#:STN2NF10 Compare: IRFL4310PBF VS STN2NF10 Manufacturers:ST Microelectronics Category:MOSFETs Description:SOT-223 N-CH 100V 2.4A