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IRFBG30PBF vs STP5NK100Z vs STP3NK100Z Comparison

  • Hide Shared Attributes
    IRFBG30PBF
    IRFBG30PBF
    STP5NK100Z
    STP5NK100Z
    STP3NK100Z
    STP3NK100Z
  • Part No.
    IRFBG30PBF
    STP5NK100Z
    STP3NK100Z
  • Description
    TO-220-3 N-CH 1000V 3.1A 5Ω
    N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
    TO-220 N-CH 1000V 2.5A
  • Manufacturer
    VISHAY
    ST Microelectronics
    ST Microelectronics
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.539
    $0.720
    $0.772
  • Inventory(pcs)
    10.2k
    46.2k
    0
  • Case/Package
    TO-220-3
    TO-220-3
    TO-220-3
  • Number of Pins
    3
    3
    3
  • Number of Channels
    -
    1
    1
  • Power Rating
    125 W
    125 W
    -
  • Power Dissipation
    125 W
    125 W
    90 W
  • Number of Positions
    3
    3
    3
  • Rise Time
    25 ns
    7.7 ns
    7.5 ns
  • Voltage Rating (DC)
    1.00 kV
    1.00 kV
    -
  • Drain to Source Resistance (on) (Rds)
    5 Ω
    3.7 Ω
    5.4 Ω
  • Polarity
    N-Channel
    N-Channel
    N-Channel
  • ECCN Code
    -
    EAR99
    -
  • Minimum Packing Quantity
    50
    -
    -
  • Threshold Voltage
    4 V
    3.75 V
    3.75 V
  • Drain to Source Voltage (Vds)
    1000 V
    1 kV
    1000 V
  • Current Rating
    3.10 A
    3.50 A
    -
  • Breakdown Voltage (Drain to Source)
    1.00 kV
    1.00 kV
    1000 V
  • Breakdown Voltage (Gate to Source)
    ±20.0 V
    ±30.0 V
    -
  • Continuous Drain Current (Ids)
    3.10 A
    3.50 A
    12.5 A
  • Operating Temperature
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
    -55℃ ~ 150℃ (TJ)
  • Size-Length
    10.41 mm
    10.4 mm
    10.4 mm
  • Size-Width
    4.7 mm
    4.6 mm
    4.6 mm
  • Size-Height
    9.01 mm
    9.15 mm
    9.15 mm
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
    Tube
  • REACH SVHC Compliance
    No SVHC
    No SVHC
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Not Recommended for New Designs
  • REACH SVHC Compliance Edition
    -
    2015/12/17
    2015/12/17
  • Transistor Gender
    N Channel
    N Channel
    N Channel
  • Power Dissipation (Max)
    125 W
    125W (Tc)
    90W (Tc)
  • Input Capacitance (Ciss)
    980pF @25V(Vds)
    1154pF @25V(Vds)
    601pF @25V(Vds)
  • Industrial-Spec
    Yes
    Yes
    -
  • Input Power (Max)
    125 W
    125 W
    90 W
  • Fall Time
    20 ns
    19 ns
    32 ns
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    150 ℃
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Overview
    IRFBG30PBF Product overview

    The IRFBG30PBF is a third generation N-channel Power MOSFET is designed with the combination of fast switching, low on-resistance and cost effectiveness.

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    STP5NK100Z Product overview

    The STP5NK100Z is a SuperMESH3™ N-channel Power MOSFET features minimized gate charge. This new SuperMESH™ Power MOSFET is the result of further design improvements on ST"s well-established strip based PowerMESH™ layout. In addition to significantly lower ON-resistance, the device offers superior dV/dt capability to ensure optimal performance even in the most demanding applications. The SuperMESH™ device further complements an already broad range of innovative high voltage MOSFETs, which includes the revolutionary MDmesh™ products.

    .
    Extremely high dV/dt capability
    .
    100% Avalanche tested
    .
    Very good manufacturing repeatability
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    STP3NK100Z Product overview

    Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs. Features ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability Application ■ Switching applications

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IRFBG30PBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRFBG30PBF Mfr.Part#:IRFBG30PBF Compare: Current Part Manufacturers:VISHAY Category:MOSFETs Description:TO-220-3 N-CH 1000V 3.1A 5Ω
Image:STP5NK100Z Mfr.Part#:STP5NK100Z Compare: IRFBG30PBF VS STP5NK100Z Manufacturers:ST Microelectronics Category:MOSFETs Description:N-CHANNEL 1000V - 2.7W - 3.5A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESHTM MOSFET
Image:STP3NK90Z Mfr.Part#:STP3NK90Z Compare: IRFBG30PBF VS STP3NK90Z Manufacturers:ST Microelectronics Category:MOSFETs Description:TO-220 N-CH 900V 3A
Image:2SK1119(F) Mfr.Part#:2SK1119(F) Compare: IRFBG30PBF VS 2SK1119(F) Manufacturers:Toshiba Category:MOSFETs Description:Trans MOSFET N-CH 1kV 4A 3Pin(3+Tab) TO-220