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IRFB3206GPBF vs STP260N6F6 vs IRFB3206PBF Comparison

  • Hide Shared Attributes
    IRFB3206GPBF
    IRFB3206GPBF
    STP260N6F6
    STP260N6F6
    IRFB3206PBF
    IRFB3206PBF
  • Part No.
    IRFB3206GPBF
    STP260N6F6
    IRFB3206PBF
  • Description
    TO-220AB N-CH 60V 210A
    TO-220 N-CH 60V 120A
    TO-220AB N-CH 60V 210A
  • Manufacturer
    Infineon
    ST Microelectronics
    Infineon
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.695
    $1.364
    $0.728
  • Inventory(pcs)
    0
    1.6k
    279
  • Case/Package
    TO-220-3
    TO-220-3
    TO-220-3
  • Number of Pins
    3
    3
    3
  • Number of Channels
    -
    1
    -
  • Power Rating
    -
    -
    300 W
  • Power Dissipation
    300 W
    300 W
    300 W
  • Number of Positions
    -
    3
    3
  • Input Capacitance
    -
    -
    6540 pF
  • Rise Time
    82 ns
    165 ns
    82 ns
  • Drain to Source Resistance (on) (Rds)
    -
    0.0024 Ω
    0.003 Ω
  • Polarity
    N-Channel
    N-Channel
    N-CH
  • Drain to Source Voltage (Vds)
    60 V
    60 V
    60 V
  • Threshold Voltage
    -
    2 V
    4 V
  • Continuous Drain Current (Ids)
    210A
    120A
    210A
  • Material
    Silicon
    -
    -
  • Operating Temperature
    -55℃ ~ 175℃ (TJ)
    -55℃ ~ 175℃ (TJ)
    -55℃ ~ 175℃ (TJ)
  • Size-Length
    10.67 mm
    10.4 mm
    10.67 mm
  • Size-Width
    4.83 mm
    4.6 mm
    4.83 mm
  • Size-Height
    16.51 mm
    15.75 mm
    9.02 mm
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
    Tube
  • REACH SVHC Compliance
    -
    No SVHC
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Not Recommended for New Designs
    Active
    Active
  • Power Dissipation (Max)
    300W (Tc)
    300W (Tc)
    300W (Tc)
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Input Power (Max)
    300 W
    300 W
    -
  • REACH SVHC Compliance Edition
    -
    2015/12/17
    2015/12/17
  • Fall Time
    83 ns
    62.6 ns
    83 ns
  • Transistor Gender
    -
    N Channel
    N Channel
  • Operating Temperature (Max)
    175 ℃
    175 ℃
    175 ℃
  • Input Capacitance (Ciss)
    6540pF @50V(Vds)
    11400pF @25V(Vds)
    6540pF @50V(Vds)
  • Overview
    IRFB3206GPBF Product overview

    Benefits:

    .
    RoHS Compliant
    View all
    STP260N6F6 Product overview

    As an alternative to traditional transistors, the STP260N6F6 power MOSFET from STMicroelectronics can be used to both amplify and switch electronic signals. Its maximum power dissipation is 300000 mW. In order to ensure parts aren"t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. This N channel MOSFET transistor operates in enhancement mode.

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    IRFB3206PBF Product overview

    The IRFB3206PBF is a HEXFET® single N-channel Power MOSFET offers improved gate, avalanche and dynamic dV/dt ruggedness. It is suitable for high efficiency synchronous rectification in SMPS, hard switched and high frequency circuits.

    .
    Fully characterized capacitance and avalanche SOA
    .
    Enhanced body diode dV/dt and di/dt capability
    .
    Halogen-free
    View all

IRFB3206GPBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRFB3206GPBF Mfr.Part#:IRFB3206GPBF Compare: Current Part Manufacturers:Infineon Category:MOSFETs Description:TO-220AB N-CH 60V 210A
Image:IRFB3206PBF Mfr.Part#:IRFB3206PBF Compare: IRFB3206GPBF VS IRFB3206PBF Manufacturers:Infineon Category:MOSFETs Description:TO-220AB N-CH 60V 210A
Image:STP260N6F6 Mfr.Part#:STP260N6F6 Compare: IRFB3206GPBF VS STP260N6F6 Manufacturers:ST Microelectronics Category:MOSFETs Description:TO-220 N-CH 60V 120A