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IRF840PBF vs SIHP8N50D-GE3 vs IRF840 Comparison

  • Hide Shared Attributes
    IRF840PBF
    IRF840PBF
    SIHP8N50D-GE3
    SIHP8N50D-GE3
    IRF840
    IRF840
  • Part No.
    IRF840PBF
    SIHP8N50D-GE3
    IRF840
  • Description
    TO-220-3 N-CH 500V 8A 850mΩ
    TO-220-3 N-CH 500V 8.7A 850mΩ
    Trans MOSFET N-CH 500V 8A 3Pin (3+Tab) TO-220AB
  • Manufacturer
    VISHAY
    VISHAY
    Fairchild
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.313
    $0.534
    -
  • Inventory(pcs)
    154.3k
    1
    0
  • Case/Package
    TO-220-3
    TO-220-3
    -
  • Number of Pins
    3
    3
    -
  • Power Rating
    125 W
    -
    -
  • Power Dissipation
    125 W
    156 W
    -
  • Number of Positions
    3
    3
    -
  • Rise Time
    23 ns
    -
    -
  • Voltage Rating (DC)
    500 V
    -
    -
  • Drain to Source Resistance (on) (Rds)
    0.85 Ω
    0.7 Ω
    -
  • Polarity
    N-Channel
    N-Channel
    -
  • Threshold Voltage
    4 V
    3 V
    -
  • Drain to Source Voltage (Vds)
    500 V
    500 V
    -
  • Minimum Packing Quantity
    50
    50
    -
  • HK STC License
    NLR
    -
    -
  • Current Rating
    8.00 A
    -
    -
  • Breakdown Voltage (Drain to Source)
    500 V
    -
    -
  • Breakdown Voltage (Gate to Source)
    ±20.0 V
    -
    -
  • Continuous Drain Current (Ids)
    8.00 A
    8.7A
    -
  • Operating Temperature
    -55℃ ~ 150℃ (TJ)
    -
    -
  • Size-Length
    -
    10.51 mm
    -
  • Size-Width
    -
    4.65 mm
    -
  • Size-Height
    -
    9.01 mm
    -
  • Mounting Style
    Through Hole
    Through Hole
    -
  • Packaging
    Tube
    Bulk
    -
  • REACH SVHC Compliance
    No SVHC
    -
    -
  • Lead-Free Status
    Lead Free
    Lead Free
    -
  • RoHS
    RoHS Compliant
    RoHS Compliant
    -
  • Product Lifecycle Status
    Active
    -
    Unknown
  • Input Capacitance (Ciss)
    1300pF @25V(Vds)
    527pF @100V(Vds)
    -
  • Operating Temperature (Min)
    -
    -55 ℃
    -
  • Input Power (Max)
    125 W
    -
    -
  • Power Dissipation (Max)
    -
    156 W
    -
  • Fall Time
    20 ns
    -
    -
  • Transistor Gender
    N Channel
    N Channel
    -
  • Operating Temperature (Max)
    150 ℃
    150 ℃
    -
  • Industrial-Spec
    -
    Yes
    -
  • Overview
    IRF840PBF Product overview

    The IRF840PBF is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.

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    SIHP8N50D-GE3 Product overview

    The SIHP8N50D-GE3 is a 500V N-channel high voltage MOSFET with low area specific on-resistance and low input capacitance. This D series MOSFET is used in displays, server and telecom power supply applications.

    .
    Reduced capacitive switching losses
    .
    High body diode ruggedness
    .
    Optimal efficiency and operation due to simple gate drive circuitry
    .
    Low figure of merit Ron X Qg
    .
    100% Avalanche rated
    View all
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IRF840PBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRF840PBF Mfr.Part#:IRF840PBF Compare: Current Part Manufacturers:VISHAY Category:MOSFETs Description:TO-220-3 N-CH 500V 8A 850mΩ
Image:SIHP8N50D-GE3 Mfr.Part#:SIHP8N50D-GE3 Compare: IRF840PBF VS SIHP8N50D-GE3 Manufacturers:VISHAY Category:MOSFETs Description:TO-220-3 N-CH 500V 8.7A 850mΩ
Image:STP9NK50Z Mfr.Part#:STP9NK50Z Compare: IRF840PBF VS STP9NK50Z Manufacturers:ST Microelectronics Category:MOSFETs Description:TO-220 N-CH 500V 7.2A
Image:STP5NK50Z Mfr.Part#:STP5NK50Z Compare: IRF840PBF VS STP5NK50Z Manufacturers:ST Microelectronics Category:MOSFETs Description:TO-220 N-CH 500V 4.4A