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IRF540NPBF vs IRF540PBF vs IRF530NPBF Comparison

  • Hide Shared Attributes
    IRF540NPBF
    IRF540NPBF
    IRF540PBF
    IRF540PBF
    IRF530NPBF
    IRF530NPBF
  • Part No.
    IRF540NPBF
    IRF540PBF
    IRF530NPBF
  • Description
    MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 44Milliohms; ID 33A; TO-220AB; PD 130W; -55deg
    TO-220-3 N-CH 100V 28A 77mΩ
    MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 90Milliohms; ID 17A; TO-220AB; PD 70W; gFS 12S
  • Manufacturer
    International Rectifier
    VISHAY
    International Rectifier
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.399
    $0.516
    $0.318
  • Inventory(pcs)
    2.5k
    0
    439
  • Case/Package
    TO-220-3
    TO-220-3
    TO-220-3
  • Number of Pins
    3
    3
    3
  • Number of Channels
    1
    -
    -
  • Power Rating
    -
    150 W
    -
  • Power Dissipation
    130 W
    150 W
    70 W
  • Number of Positions
    3
    3
    3
  • Rise Time
    35 ns
    44 ns
    22 ns
  • Input Capacitance
    1960pF @25V
    -
    920pF @25V
  • Voltage Rating (DC)
    100 V
    100 V
    100 V
  • Drain to Source Resistance (on) (Rds)
    0.044 Ω
    0.077 Ω
    0.09 Ω
  • Polarity
    N-Channel
    N-Channel
    N-Channel
  • ECCN Code
    EAR99
    EAR99
    -
  • Threshold Voltage
    4 V
    4 V
    4 V
  • Minimum Packing Quantity
    -
    50
    -
  • Drain to Source Voltage (Vds)
    100 V
    100 V
    100 V
  • Current Rating
    27.0 A
    28.0 A
    17.0 A
  • Breakdown Voltage (Drain to Source)
    100 V
    100 V
    100 V
  • Breakdown Voltage (Gate to Source)
    -
    ±20.0 V
    ±20.0 V
  • Continuous Drain Current (Ids)
    33.0 A
    28.0 A
    17.0 A
  • Operating Temperature
    -55℃ ~ 175℃
    -55℃ ~ 175℃ (TJ)
    -55℃ ~ 175℃
  • Part Family
    IRF540N
    -
    IRF530N
  • Size-Length
    10.54 mm
    10.41 mm
    10.54 mm
  • Size-Width
    4.4 mm
    4.7 mm
    -
  • Size-Height
    15.24 mm
    9.01 mm
    15.24 mm
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Rail, Tube
    Tube
    Tube
  • REACH SVHC Compliance
    No SVHC
    -
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Transistor Gender
    N Channel
    N Channel
    N Channel
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Operating Temperature (Max)
    175 ℃
    175 ℃
    175 ℃
  • Automative-Spec
    Yes
    -
    -
  • Power Dissipation (Max)
    130000 mW
    150 W
    70000 mW
  • Input Capacitance (Ciss)
    1960pF @25V(Vds)
    1700pF @25V(Vds)
    920pF @25V(Vds)
  • Industrial-Spec
    Yes
    -
    -
  • Input Power (Max)
    130 W
    150 W
    70 W
  • Fall Time
    35 ns
    43 ns
    25 ns
  • Overview
    IRF540NPBF Product overview

    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

    .
    *Feature:**
    .
    Advanced Process Technology
    .
    Ultra Low On-Resistance
    .
    Dynamic dv/dt Rating
    .
    175°C Operating Temperature
    .
    Fast Switching
    .
    Fully Avalanche Rated
    .
    Lead-Free
    View all
    IRF540PBF Product overview

    The IRF540PBF is a 100V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance.

    .
    Dynamic dV/dt rating
    .
    Repetitive avalanche rated
    .
    175°C Operating temperature
    .
    Easy to parallel
    .
    Simple drive requirement
    View all
    IRF530NPBF Product overview

    **N-Channel Power MOSFET 13A to 19A, Infineon** Infineon"s range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

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IRF540PBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRF540PBF Mfr.Part#:IRF540PBF Compare: Current Part Manufacturers:VISHAY Category:MOSFETs Description:TO-220-3 N-CH 100V 28A 77mΩ
Image:STP30NF10 Mfr.Part#:STP30NF10 Compare: IRF540PBF VS STP30NF10 Manufacturers:ST Microelectronics Category:MOSFETs Description:TO-220 N-CH 100V 35A
Image:STP24NF10 Mfr.Part#:STP24NF10 Compare: IRF540PBF VS STP24NF10 Manufacturers:ST Microelectronics Category:MOSFETs Description:TO-220 N-CH 100V 26A
Image:IRF540NPBF Mfr.Part#:IRF540NPBF Compare: IRF540PBF VS IRF540NPBF Manufacturers:International Rectifier Category:MOSFETs Description:MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 44Milliohms; ID 33A; TO-220AB; PD 130W; -55deg