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IRF3710 vs IRF3710PBF Comparison

  • Hide Shared Attributes
    IRF3710
    IRF3710
    IRF3710PBF
    IRF3710PBF
  • Part No.
    IRF3710
    IRF3710PBF
  • Description
    100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
    TO-220AB N-CH 100V 57A
  • Manufacturer
    Infineon
    Infineon
  • Classification
    -
    MOSFETs
  • Reference Price(USD)
    -
    $0.330
  • Inventory(pcs)
    0
    68.2k
  • Case/Package
    TO-220
    TO-220-3
  • Number of Pins
    3
    3
  • Number of Channels
    -
    1
  • Power Rating
    -
    200 W
  • Power Dissipation
    -
    200 W
  • Number of Positions
    -
    3
  • Input Capacitance
    -
    3130 pF
  • Rise Time
    58 ns
    58 ns
  • Drain to Source Resistance (on) (Rds)
    -
    0.023 Ω
  • Polarity
    -
    N-Channel
  • Threshold Voltage
    -
    4 V
  • Drain to Source Voltage (Vds)
    -
    100 V
  • Breakdown Voltage (Drain to Source)
    -
    100 V
  • Continuous Drain Current (Ids)
    -
    57A
  • Material
    Silicon
    Silicon
  • Operating Temperature
    -
    -55℃ ~ 175℃ (TJ)
  • Size-Length
    -
    10.67 mm
  • Size-Width
    -
    4.69 mm
  • Size-Height
    -
    8.77 mm
  • Mounting Style
    Through Hole
    Through Hole
  • Packaging
    Tube
    Tube
  • Lead-Free Status
    Contains Lead
    Lead Free
  • RoHS
    Non-Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
  • Input Power (Max)
    -
    200 W
  • Input Capacitance (Ciss)
    3130pF @25V(Vds)
    3130pF @25V(Vds)
  • Fall Time
    47 ns
    47 ns
  • Operating Temperature (Max)
    175 ℃
    175 ℃
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
  • Power Dissipation (Max)
    200000 mW
    200W (Tc)
  • REACH SVHC Compliance Edition
    -
    2015/12/17
  • Transistor Gender
    -
    N Channel
  • Overview
    IRF3710 Product overview

    Benefits:

    .
    RoHS Compliant
    .
    Low RDS(on)
    .
    Industry-leading quality
    .
    Dynamic dv/dt Rating
    .
    Fast Switching
    .
    Fully Avalanche Rated
    .
    175°C Operating Temperature
    View all
    IRF3710PBF Product overview

    The IRF3710PBF is a 100V single N-channel Advanced HEXFET® Power MOSFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

    .
    Advanced process technology
    .
    Ultra low on-resistance
    .
    Dynamic dV/dt rating
    .
    Fully avalanche rated
    .
    175°C Operating temperature
    View all

IRF3710PBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRF3710PBF Mfr.Part#:IRF3710PBF Compare: Current Part Manufacturers:Infineon Category:MOSFETs Description:TO-220AB N-CH 100V 57A
Image:HUF75639P3 Mfr.Part#:HUF75639P3 Compare: IRF3710PBF VS HUF75639P3 Manufacturers:Fairchild Category:MOSFETs Description:Trans MOSFET N-CH 100V 56A 3Pin(3+Tab) TO-220AB Rail
Image:IRF3710 Mfr.Part#:IRF3710 Compare: IRF3710PBF VS IRF3710 Manufacturers:Infineon Category: Description:100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Image:MTD3055E Mfr.Part#:MTD3055E Compare: IRF3710PBF VS MTD3055E Manufacturers:Motorola Category: Description:TMOS power FET. 60V, 8A, Rds(on) 0.15Ω.