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Home  IRF3315PBF  IRF3315PBF VS RF3315

IRF3315 vs IRF3315PBF vs RF3315 Comparison

  • Hide Shared Attributes
    IRF3315
    IRF3315
    IRF3315PBF
    IRF3315PBF
    RF3315
    RF3315
  • Part No.
    IRF3315
    IRF3315PBF
    RF3315
  • Description
    TO-220AB N-CH 150V 27A
    TO-220AB N-CH 150V 23A
    Power Field-Effect Transistor, 23A I(D), 150V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3
  • Manufacturer
    Infineon
    Infineon
    Infineon
  • Classification
    MOSFETs
    MOSFETs
    -
  • Reference Price(USD)
    $0.288
    $0.498
    -
  • Inventory(pcs)
    0
    3.8k
    0
  • Case/Package
    TO-220-3
    TO-220-3
    -
  • Number of Pins
    -
    3
    -
  • Power Rating
    -
    94 W
    -
  • Power Dissipation
    136W (Tc)
    94 W
    -
  • Number of Positions
    -
    3
    -
  • Rise Time
    -
    32 ns
    -
  • Input Capacitance
    -
    1300 pF
    -
  • Thermal Resistance
    -
    1.6℃/W (RθJC)
    -
  • Drain to Source Resistance (on) (Rds)
    -
    0.07 Ω
    -
  • Polarity
    N-CH
    N-Channel
    -
  • Threshold Voltage
    -
    4 V
    -
  • Drain to Source Voltage (Vds)
    150 V
    150 V
    -
  • Breakdown Voltage (Drain to Source)
    -
    150 V
    -
  • Continuous Drain Current (Ids)
    27A
    23A
    -
  • Operating Temperature
    -55℃ ~ 175℃ (TJ)
    -55℃ ~ 175℃ (TJ)
    -
  • Size-Length
    -
    10.54 mm
    -
  • Size-Width
    -
    4.69 mm
    -
  • Size-Height
    -
    8.77 mm
    -
  • Mounting Style
    Through Hole
    Through Hole
    -
  • Packaging
    -
    Tube
    -
  • Lead-Free Status
    Lead Free
    -
  • RoHS
    RoHS Compliant
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • REACH SVHC Compliance Edition
    -
    2015/12/17
    -
  • Input Capacitance (Ciss)
    1300pF @25V(Vds)
    1300pF @25V(Vds)
    -
  • Transistor Gender
    -
    N Channel
    -
  • Power Dissipation (Max)
    136W (Tc)
    94W (Tc)
    -
  • Industrial-Spec
    -
    Yes
    -
  • Input Power (Max)
    -
    94 W
    -
  • Fall Time
    -
    38 ns
    -
  • Operating Temperature (Max)
    -
    175 ℃
    -
  • Operating Temperature (Min)
    -
    -55 ℃
    -
  • Overview
    IRF3315 Product overview

    Benefits:

    .
    RoHS Compliant
    .
    Low RDS(on)
    .
    Industry-leading quality
    .
    Dynamic dv/dt Rating
    .
    Fast Switching
    .
    Fully Avalanche Rated
    .
    175°C Operating Temperature
    View all
    IRF3315PBF Product overview

    The IRF3315PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.

    .
    Advanced process technology
    .
    Dynamic dV/dt rating
    .
    Fully avalanche rating
    View all
    View all

IRF3315PBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRF3315PBF Mfr.Part#:IRF3315PBF Compare: Current Part Manufacturers:Infineon Category:MOSFETs Description:TO-220AB N-CH 150V 23A
Image:IRFB4615PBF Mfr.Part#:IRFB4615PBF Compare: IRF3315PBF VS IRFB4615PBF Manufacturers:Infineon Category:MOSFETs Description:TO-220AB N-CH 150V 35A
Image:IRF3315 Mfr.Part#:IRF3315 Compare: IRF3315PBF VS IRF3315 Manufacturers:Infineon Category:MOSFETs Description:TO-220AB N-CH 150V 27A
Image:RF3315 Mfr.Part#:RF3315 Compare: IRF3315PBF VS RF3315 Manufacturers:Infineon Category: Description:Power Field-Effect Transistor, 23A I(D), 150V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3