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Home  IRF1407PBF  IRF1407PBF VS STP140NF75

IRF1407PBF vs IRFB3077PBF vs STP140NF75 Comparison

  • Hide Shared Attributes
    IRF1407PBF
    IRF1407PBF
    IRFB3077PBF
    IRFB3077PBF
    STP140NF75
    STP140NF75
  • Part No.
    IRF1407PBF
    IRFB3077PBF
    STP140NF75
  • Description
    TO-220AB N-CH 80V 130A
    TO-220AB N-CH 75V 210A
    Trans MOSFET N-CH 75V 120A 3Pin(3+Tab) TO-220 Tube
  • Manufacturer
    Infineon
    Infineon
    ST Microelectronics
  • Classification
    MOSFETs
    MOSFETs
    MOSFETs
  • Reference Price(USD)
    $0.649
    $1.028
    $0.658
  • Inventory(pcs)
    471
    8.7k
    2.1k
  • Case/Package
    TO-220-3
    TO-220-3
    TO-220-3
  • Number of Pins
    3
    3
    3
  • Number of Channels
    -
    1
    -
  • Power Rating
    330 W
    370 W
    -
  • Power Dissipation
    330 W
    370 W
    310 W
  • Number of Positions
    3
    3
    3
  • Input Capacitance
    5600pF @25V
    9400 pF
    5000 pF
  • Rise Time
    150 ns
    87 ns
    140 ns
  • Voltage Rating (DC)
    -
    -
    75.0 V
  • Drain to Source Resistance (on) (Rds)
    0.0078 Ω
    0.0033 Ω
    0.0075 Ω
  • Polarity
    N-Channel
    N-Channel
    N-Channel
  • Threshold Voltage
    4 V
    4 V
    4 V
  • ECCN Code
    -
    EAR99
    EAR99
  • Drain to Source Voltage (Vds)
    75 V
    75 V
    75 V
  • Current Rating
    -
    -
    120 A
  • Breakdown Voltage (Drain to Source)
    75 V
    75 V
    75.0 V
  • Breakdown Voltage (Gate to Source)
    -
    -
    ±20.0 V
  • Continuous Drain Current (Ids)
    130A
    210A
    120 A
  • Operating Temperature
    -55℃ ~ 175℃ (TJ)
    -55℃ ~ 175℃ (TJ)
    -55℃ ~ 175℃ (TJ)
  • Material
    -
    Silicon
    -
  • Size-Length
    10.67 mm
    10.67 mm
    10.4 mm
  • Size-Width
    4.4 mm
    4.82 mm
    4.6 mm
  • Size-Height
    15.65 mm
    9.02 mm
    9.15 mm
  • Mounting Style
    Through Hole
    Through Hole
    Through Hole
  • Packaging
    Rail, Tube
    Tube
    Tube
  • REACH SVHC Compliance
    -
    -
    No SVHC
  • Lead-Free Status
    Lead Free
    Lead Free
    Lead Free
  • RoHS
    RoHS Compliant
    RoHS Compliant
  • Product Lifecycle Status
    Active
    Active
    Active
  • Operating Temperature (Max)
    175 ℃
    175 ℃
    175 ℃
  • Input Power (Max)
    330 W
    370 W
    310 W
  • Transistor Gender
    N Channel
    N Channel
    N Channel
  • Operating Temperature (Min)
    -55 ℃
    -55 ℃
    -55 ℃
  • Fall Time
    140 ns
    95 ns
    90 ns
  • Input Capacitance (Ciss)
    5600pF @25V(Vds)
    9400pF @50V(Vds)
    5000pF @25V(Vds)
  • Industrial-Spec
    -
    -
    Yes
  • Power Dissipation (Max)
    330W (Tc)
    370W (Tc)
    310W (Tc)
  • REACH SVHC Compliance Edition
    2015/12/17
    2015/12/17
    2014/06/16
  • Automative-Spec
    Yes
    -
    -
  • Overview
    IRF1407PBF Product overview

    The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

    .
    Advanced process technology
    .
    Dynamic dV/dt rating
    .
    Repetitive avalanche allowed up to Tjmax
    View all
    IRFB3077PBF Product overview

    The IRFB3077PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.

    .
    Improved gate, avalanche and dynamic dv/dt ruggedness
    .
    Fully characterized capacitance and avalanche SOA
    .
    Enhanced body diode dV/dt and dI/dt capability
    View all
    STP140NF75 Product overview

    The STP140NF75 is a STripFET™ II N-channel Power MOSFET developed using unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

    .
    100% Avalanche tested
    .
    -55 to 175°C Operating junction temperature range
    View all

IRF1407PBF Alternative Parts

Image Part Compare Manufacturer Category Description
Image:IRF1407PBF Mfr.Part#:IRF1407PBF Compare: Current Part Manufacturers:Infineon Category:MOSFETs Description:TO-220AB N-CH 80V 130A
Image:IRFB3077PBF Mfr.Part#:IRFB3077PBF Compare: IRF1407PBF VS IRFB3077PBF Manufacturers:Infineon Category:MOSFETs Description:TO-220AB N-CH 75V 210A
Image:IRFB3307PBF Mfr.Part#:IRFB3307PBF Compare: IRF1407PBF VS IRFB3307PBF Manufacturers:Infineon Category:MOSFETs Description:TO-220AB N-CH 75V 120A
Image:STP140NF75 Mfr.Part#:STP140NF75 Compare: IRF1407PBF VS STP140NF75 Manufacturers:ST Microelectronics Category:MOSFETs Description:Trans MOSFET N-CH 75V 120A 3Pin(3+Tab) TO-220 Tube